Blank for mold production and method for manufacturing mold

Patent metadata

Field	Value
Publication number	US-10040220-B2
Application number	US-201615235461-A
Country	US
Kind code	B2
Filing date	Aug 12, 2016
Priority date	May 16, 2012
Publication date	Aug 7, 2018
Grant date	Aug 7, 2018

Abstract

A hard mask film 2 provided on substrate 1 is formed by tin-containing chromium-containing material. In the chromium-containing material including tin, which forms the hard mask film 2, the etching resistance to fluorine-containing dry etching is equal to or higher than the etching resistance of the tin-free chromium-containing material, and it shows a significantly high etching rate as compared with a chromium-containing material free of tin under conditions for chlorine-containing dry etching. As a result, the time for chlorine-containing dry etching is shortened, and damage to a resist pattern is reduced. Thus, high-precision pattern transfer can be performed. The present invention provides a novel technique for increasing etching process-ability by increasing a dry-etching rate of a hard mask film made of a chromium-containing material while assuring a hard mask function of the hard mask film.

First claim

The invention claimed is:

1. A blank for mold production comprising:
a hard mask film comprising a material comprising chromium and tin, and
a substrate comprising a silicon-containing material,
wherein the hard mask film is in direct contact with the silicon-containing material of the substrate, and the hard mask film has a thickness of 1 to 10 nm, and
wherein the material comprising chromium and tin has a content of tin of from 0.01 to 2 times the content of chromium in atomic ratio.

2. The blank for mold production according to claim 1 , wherein the material comprising chromium and tin is selected from the group consisting of a tin-chromium metal, a tin-chromium oxide, a tin-chromium nitride, a tin-chromium carbide, a tin-chromium oxide nitride, a tin-chromium oxide carbide, a tin-chromium nitride carbide, and a tin-chromium oxide nitride carbide.

3. The blank for mold production according to claim 1 , wherein the substrate is a quartz substrate.

4. The blank for mold production according to claim 1 , wherein the material comprising chromium and tin is a tin-chromium metal.

5. The blank for mold production according to claim 1 , wherein the material comprising chromium and tin is a tin-chromium oxide.

6. The blank for mold production according to claim 1 , wherein the material comprising chromium and tin is a tin-chromium nitride.

7. The blank for mold production according to claim 1 , wherein the material comprising chromium and tin is a tin-chromium carbide.

8. The blank for mold production according to claim 1 , wherein the material comprising chromium and tin is a tin-chromium oxide nitride.

9. The blank for mold production according to claim 1 , wherein the material comprising chromium and tin is a tin-chromium oxide carbide.

10. The blank for mold production according to claim 1 , wherein the material comprising chromium and tin is a tin-chromium nitride carbide.

11. The blank for mold production according to claim 1 , wherein the material comprising chromium and tin is a tin-chromium oxide nitride carbide.

Assignees

• Shinetsu Chemical Co

Inventors

• Fukaya Souichi
• Nakagawa Hideo
• Sasamoto Kouhei

Classifications

• G03F1/54

  Absorbers, e.g. of opaque materials · CPC title

• G03F7/0002

  Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping · CPC title

• C03C17/3665

  specially adapted for use as photomask · CPC title

• B82Y40/00

  Manufacture or treatment of nanostructures · CPC title

• C04B35/105

  containing chromium oxide or chrome ore · CPC title