Blank for mold production and method for manufacturing mold

Patent metadata

Field	Value
Publication number	US-9440375-B2
Application number	US-201313892523-A
Country	US
Kind code	B2
Filing date	May 13, 2013
Priority date	May 16, 2012
Publication date	Sep 13, 2016
Grant date	Sep 13, 2016

Abstract

A hard mask film 2 provided on substrate 1 is formed by tin-containing chromium-containing material. In the chromium-containing material including tin, which forms the hard mask film 2 , the etching resistance to fluorine-containing dry etching is equal to or higher than the etching resistance of the tin-free chromium-containing material, and it shows a significantly high etching rate as compared with a chromium-containing material free of tin under conditions for chlorine-containing dry etching. As a result, the time for chlorine-containing dry etching is shortened, and damage to a resist pattern is reduced. Thus, high-precision pattern transfer can be performed. The present invention provides a novel technique for increasing etching process-ability by increasing a dry-etching rate of a hard mask film made of a chromium-containing material while assuring a hard mask function of the hard mask film.

First claim

The invention claimed is:

1. A blank for mold production comprising:
a hard mask film comprising a material comprising chromium and tin, and
a substrate capable of being etched by fluorine-containing dry etching,
wherein the hard mask film is disposed on the substrate, and the hard mask film has a thickness of 1 to 10 nm,
wherein the material comprising chromium and tin has a content of tin of not under 0.01 times the content of chromium in atomic ratio and not over 2 times the content of chromium in atomic ratio, and the concentration of tin in the material comprising chromium and tin varies in a thickness direction of the material, and
wherein the substrate capable of being etched by fluorine-containing dry etching is a substrate comprising a silicon-containing material.

2. The blank according to claim 1 , wherein
the material comprising chromium and tin is selected from the group consisting of a tin-chromium metal, a tin-chromium oxide, a tin-chromium nitride, a tin-chromium carbide, a tin-chromium oxide nitride, a tin-chromium oxide carbide, a tin-chromium nitride carbide, and a tin-chromium oxide nitride carbide.

3. The blank according to claim 1 , wherein
the substrate capable of being etched by fluorine-containing dry etching is a quartz substrate.

4. A method for manufacturing a mold using the blank according to claim 1 , the method comprising:
etching the hard mask film comprising the material comprising chromium and tin by chlorine-containing dry etching to form a hard mask pattern; and
etching the substrate by fluorine-containing dry etching using the hard mask pattern.

5. The method for manufacturing a mold according to claim 4 , wherein
the material comprising chromium and tin is selected from the group consisting of a tin-chromium metal, a tin-chromium oxide, a tin-chromium nitride, a tin-chromium carbide, a tin-chromium oxide nitride, a tin-chromium oxide carbide, a tin-chromium nitride carbide, and a tin-chromium oxide nitride carbide.

6. The method for manufacturing a mold according to claim 4 , wherein
the substrate capable of being etched by fluorine-containing dry etching is a quartz substrate.

7. The blank according to claim 1 , wherein
the material comprising chromium and tin is a tin-chromium metal.

8. The blank according to claim 1 , wherein
the material comprising chromium and tin is a tin-chromium oxide.

9. The blank according to claim 1 , wherein
the material comprising chromium and tin is a tin-chromium nitride.

10. The blank according to claim 1 , wherein
the material comprising chromium and tin is a tin-chromium carbide.

11. The blank according to claim 1 , wherein
the material comprising chromium and tin is a tin-chromium oxide nitride.

12. The blank according to claim 1 , wherein
the material comprising chromium and tin is a tin-chromium oxide carbide.

13. The blank according to claim 1 , wherein
the material comprising chromium and tin is a tin-chromium nitride carbide.

14. The blank according to claim 1 , wherein
the material comprising chromium and tin is a tin-chromium oxide nitride carbide.

Assignees

• Shinetsu Chemical Co

Inventors

• Fukaya Souichi
• Nakagawa Hideo
• Sasamoto Kouhei

Classifications

• B82Y10/00 Primary

  Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic · CPC title

• C04B35/047

  containing chromium oxide or chrome ore · CPC title

• C03C17/23

  Oxides (C03C17/02 takes precedence) · CPC title

• C04B35/56

  based on carbides {or oxycarbides (containing free metal binder C22C29/00)} · CPC title

• G03F1/54

  Absorbers, e.g. of opaque materials · CPC title