Temperature compensated constant current system and method

Patent metadata

Field	Value
Publication number	US-10038426-B2
Application number	US-201615220327-A
Country	US
Kind code	B2
Filing date	Jul 26, 2016
Priority date	Jul 26, 2016
Publication date	Jul 31, 2018
Grant date	Jul 31, 2018

Abstract

A current reference circuit includes a voltage generating device, a resistor, one or more diodes, and a thermal bridge including one or more metal alloy contacts disposed on a substrate. The voltage generating device and the resistor have similar temperature coefficients. The diodes are thermally connected to the voltage generating device through the substrate. The metal alloy contacts are coupled between the diodes and the resistor. The diodes form a reverse bias junction when the compensation circuit is energized such that the thermal bridge may provide thermal conduction between the voltage generating device and the resistor.

First claim

What is claimed is:

1. A current reference circuit comprising:
a voltage generating device disposed in a substrate, the voltage generating device having a temperature dependent voltage;
a resistor having a proportional temperature dependent resistance proportional to the voltage generating device;
one or more diodes connected to the voltage generating device to thermally couple the resistor to the voltage generating device; and
a thermal bridge comprising one or more metal alloy contacts coupled between the one or more diodes and the resistor, the one or more diodes forming a reverse bias junction when the current reference circuit is energized, wherein the thermal bridge provides thermal conduction between the voltage generating device and the resistor for providing a reference current output wherein each of the metal alloy contacts are thermally coupled to an N-doped region of the one or more diodes.

2. The current reference circuit of claim 1 , wherein the resistor is electrically coupled to the voltage generating device such that, when the current reference circuit is energized, the reference current output is generated through the resistor that is compensated according to changes in temperature due to its temperature dependent resistance that is proportional to the voltage generating device.

3. The current reference circuit of claim 1 , further comprising a voltage measurement device that measures a voltage across the voltage generating device and a voltage across the resistor, wherein a current level through the resistor is proportional to a ratio of the voltage across the resistor and a voltage generated by the voltage generating device.

4. The current reference circuit of claim 1 , wherein the voltage generating device comprises a proportional to absolute temperature (PTAT) circuit.

5. A current reference circuit comprising:
a voltage generating device disposed in a substrate, the voltage generating device having a temperature dependent voltage wherein the voltage generating device comprises a proportional to absolute temperature (PTAT) circuit;
a resistor having a proportional temperature dependent resistance proportional to the voltage generating device;
a diode connected to the voltage generating device to thermally couple the resistor to the voltage generating device wherein the diode includes a plurality of diodes, and the one or more metal alloy contacts comprise a plurality of metal alloy contacts, each of the metal alloy contacts thermally coupled to corresponding N-doped regions of each of the diodes; and
a thermal bridge comprising one or more metal alloy contacts coupled between the plurality of diodes and the resistor, the plurality of diodes forming a reverse bias junction when the current reference circuit is energized, wherein the thermal bridge provides thermal conduction between the voltage generating device and the resistor for providing a reference current output.

6. The current reference circuit of claim 4 , wherein the one or more diodes comprise a single diode, and the one or more metal alloy contacts comprise a plurality of metal alloy contacts, each of the metal alloy contacts thermally coupled to an N-doped region of the single diode.

7. The current reference circuit of claim 1 , wherein the resistor is formed above the substrate, and the thermal bridge is formed between the resistor and the voltage generating device.

8. The current reference circuit of claim 1 , wherein the resistor is formed of an elongated section of metal alloy.

9. The current reference circuit of claim 1 , further comprising a temperature sensor to measure the current reference circuit at a plurality of differing temperature levels, and implementing a correction factor, using the differing temperature levels, to be applied to the current reference circuit while in operation.

10. A method comprising:
providing a voltage generating device having a temperature dependent voltage, a resistor having a temperature dependent resistance proportional to the voltage generating device, a diode connected to the voltage generating device to thermally coupled the resistor to the voltage generating device, and a thermal bridge comprising one or more metal alloy contacts coupled between the diode and the resistor;
forming the resistor above a substrate, and forming the thermal bridge between the resistor and the voltage generating device; and
configuring the voltage generating device such that a reverse bias junction is formed in the diode in response to energizing the voltage generating device, wherein the thermal bridge provides thermal conduction between the voltage generating device and the resistor for providing a reference current output.

11. The method of claim 10 , further comprising generating the reference current output through the resistor that is compensated according to changes in temperature, wherein the resistor is electrically coupled to the voltage generating device due to its temperature dependent resistance that is proportional to the voltage generating device.

12. The method of claim 10 , further comprising configuring a voltage measurement circuit to measure a voltage across the voltage generating device and a voltage across the resistor, wherein a current level through the resistor is proportional to a ratio of the voltage across the resistor and the voltage generated by the voltage generating device.

13. The method of claim 10 , wherein the voltage generating device comprises a proportional to absolute temperature (PTAT) circuit.

14. The method of claim 10 , further comprising forming the resistor from an elongated section of metal alloy.

15. The method of claim 10 , further comprising:
configuring a temperature sensor to measure the current reference circuit at a plurality of differing temperature levels; and
implementing a correction factor, using the differing temperature levels, to be applied to the current reference circuit while in operation.

16. A current reference circuit comprising:
a proportional to absolute temperature (PTAT) circuit disposed in a substrate, the PTAT circuit having a temperature dependent voltage;
a resistor having a proportional temperature dependent resistance proportional to the PTAT circuit, the resistor being electrically coupled to the PTAT circuit and formed from an elongated section of metal alloy;
a diode connected to the PTAT circuit to thermally couple the substrate and the PTAT circuit; and
a thermal bridge comprising one or more metal alloy contacts coupled between the diode and the resistor, the diode forming a reverse bias junction when the current reference circuit is energized, wherein the thermal bridge provides thermal conduction between the PTAT circuit and the resistor for providing a reference current output wherein the metal alloy contacts include a plurality of metal alloy contacts, each of the metal alloy contacts thermally coupled to an N-doped region of the diode.

17. The current reference circuit of claim 16 , wherein the diode comprises a plurality of diodes, and the one or more metal alloy contacts comprise a plurality of metal alloy contacts, each of the metal alloy contacts thermally coupled to corresponding N-doped regions of each of the plurality of diodes, wherein when the compensation circuit is energized, the reverse bias junction ensures that the plurality of diodes are substantially void of any operational role in the circuit.

18. The current reference circuit of claim 16 , wherein the diode comprises a single diode, and the one or more metal alloy contacts comprise a plur

Assignees

• Semiconductor Components Ind Llc

Inventors

• Bertin Jacques Jean

Classifications

• G05F3/265

  using bipolar transistors only · CPC title

• H03K3/011 Primary

  Modifications of generator to compensate for variations in physical values, e.g. voltage, temperature {(to maintain energy constant H03K3/015)} · CPC title

• G05F3/30 Primary

  Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities (G05F3/26 takes precedence) · CPC title

• H10D89/911

  using passive elements as protective elements · CPC title

• H10D89/611

  using diodes as protective elements · CPC title