Establishing a thermal profile across a semiconductor chip

US9178495B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9178495-B2
Application numberUS-201414221859-A
CountryUS
Kind codeB2
Filing dateMar 21, 2014
Priority dateMar 21, 2014
Publication dateNov 3, 2015
Grant dateNov 3, 2015

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Abstract

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Embodiments of the present invention disclose a semiconductor structure and method for establishing a thermal profile across a semiconductor chip. In certain embodiments, the semiconductor structure comprises a through-silicon via formed in a first semiconductor chip having thermal control circuitry, wherein the through-silicon via is formed in a manner to be thermally coupled to the thermal control circuitry and a region of a second semiconductor chip, and wherein the through-silicon via conducts heat from the thermal control circuitry to the region. In other embodiments, the method comprises forming a through-silicon via in a first semiconductor chip having thermal control circuitry. The method also comprises forming the through-silicon via in a manner to be thermally coupled to the thermal control circuitry and a region of a second semiconductor chip, wherein the through-silicon via conducts heat from the thermal control circuitry to the region.

First claim

Opening claim text (preview).

What is claimed is: 1. A semiconductor structure comprising: a first semiconductor chip comprising: a first substrate; a first device and a second device on said first substrate, said second device selectively controlling said first device such that said first device generates a predetermined amount of heat; a dielectric layer on said first device and said second device; and, a conductor extending vertically through said dielectric layer to said first device; a second s…

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What does patent US9178495B2 cover?
Embodiments of the present invention disclose a semiconductor structure and method for establishing a thermal profile across a semiconductor chip. In certain embodiments, the semiconductor structure comprises a through-silicon via formed in a first semiconductor chip having thermal control circuitry, wherein the through-silicon via is formed in a manner to be thermally coupled to the thermal co…
Who is the assignee on this patent?
IBM, Globalfoundries Us 2 Llc
What technology area does this patent fall under?
Primary CPC classification H10W40/10. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Nov 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).