Package structure and method of forming the same

Patent metadata

Field	Value
Publication number	US-10037963-B2
Application number	US-201715449321-A
Country	US
Kind code	B2
Filing date	Mar 3, 2017
Priority date	Nov 29, 2016
Publication date	Jul 31, 2018
Grant date	Jul 31, 2018

Abstract

A package structure and method of forming the same includes: a first package including: a first die; a via adjacent the first die; a molding compound encapsulating the via and at least laterally encapsulating the first die around a perimeter of the first die; and a first redistribution structure extending over the first die and the molding compound; a first integrated passive device (IPD) attached to the first redistribution structure, the first IPD disposed proximate the perimeter of the first die; a second IPD attached to the first redistribution structure, the second IPD disposed distal the perimeter of the first die; and an underfill disposed between the first IPD and the first redistribution structure, the second IPD being free of the underfill.

First claim

What is claimed is:

1. A method comprising:
forming a first package comprising:
forming a via over a first carrier substrate;
attaching a first die to the first carrier substrate, the via being adjacent the first die, the first die having a first side and a second side opposite the first side, the first side facing the first carrier substrate;
encapsulating the first die and the via with a molding compound; and
forming a redistribution structure overlying the second side of the first die and the molding compound;

attaching integrated passive devices (IPDs) to the redistribution structure, a first subset of the IPDs proximate a perimeter of the first die, a second subset of the IPDs distal the perimeter of the first die; and
forming an underfill between the redistribution structure and each of the first subset of the IPDs, the underfill not formed between the redistribution structure and each of the second subset of the IPDs.

2. The method of claim 1 , further comprising:
debonding the first carrier substrate from the first package; and
bonding a second package to the first package, the first side of the first die facing the second package.

3. The method of claim 1 , wherein the redistribution structure has a first side and a second side opposite the first side, the first side facing the first die, the second side facing the IPDs.

4. The method of claim 3 , further comprising:
bonding the first package to a second carrier substrate, the second side of the redistribution structure facing the second carrier substrate.

5. The method of claim 1 , wherein the IPDs comprise first micro bump connections.

6. The method of claim 5 , wherein attaching the IPDs to the redistribution structure comprises:
soldering the first micro bump connections of the IPDs to second micro bump connections of the redistribution structure.

7. The method of claim 5 , wherein the underfill contacts the first micro bump connections of the first subset of the IPDs.

8. The method of claim 5 , wherein the underfill does not contact the first micro bump connections of the second subset of the IPDs.

9. The method of claim 1 , wherein attaching the IPDs to the redistribution structure comprises:
attaching the first subset of the IPDs to the redistribution structure less than 30 μm from the perimeter of the first die; and
attaching the second subset of the IPDs to the redistribution structure more than 30 μm from the perimeter of the first die.

10. A method comprising:
forming a first through via adjacent a first die, the first die having a first side and a second side opposite the first side;
encapsulating the first through via and the first die with a molding material;
forming a first redistribution structure over the first side of the first die, the first through via, and the molding material, the first redistribution structure having a first side facing the first die and a second side opposite the first side, the first die having a perimeter;
forming a first under bump metallization on the second side of the first redistribution structure;
attaching integrated passive devices (IPDs) to the second side of the first redistribution structure; and
forming an underfill between the second side of the first redistribution structure and each of a subset of the IPDs, the subset of the IPDs proximate the perimeter of the first die.

11. The method of claim 10 , wherein the subset of the IPDs are within 30 μm of the perimeter of the first die.

12. The method of claim 11 , wherein the subset of the IPDs are disposed inside the perimeter of the first die.

13. The method of claim 11 , wherein the subset of the IPDs are disposed outside the perimeter of the first die.

14. The method of claim 10 , wherein remaining IPDs are distal the perimeter of the first die.

15. The method of claim 14 , wherein the remaining IPDs are more than 30 μm from the perimeter of the first die.

16. The method of claim 10 , wherein the IPDs comprise first micro bump connections, and wherein forming the underfill comprises forming the underfill contacting the first micro bump connections of the subset of the IPDs.

17. A structure comprising:
a first package comprising:
a first die;
a via adjacent the first die;
a molding compound encapsulating the via and at least laterally encapsulating the first die around a perimeter of the first die; and
a first redistribution structure extending over the first die and the molding compound;

a first integrated passive device (IPD) attached to the first redistribution structure, the first IPD disposed proximate the perimeter of the first die;
a second IPD attached to the first redistribution structure, the second IPD disposed distal the perimeter of the first die; and
an underfill disposed between the first IPD and the first redistribution structure, the second IPD being free of the underfill.

18. The structure of claim 17 , further comprising:
a first conductive connector coupled to the first redistribution structure and the first IPD, the underfill contacting the first conductive connector; and
a second conductive connector coupled to the first redistribution structure and the second IPD, the underfill not contacting the second conductive connector.

19. The structure of claim 17 , wherein the first IPD is located less than 30 μm from the perimeter of the first die.

20. The structure of claim 17 , wherein the second IPD is located more than 30 μm from the perimeter of the first die.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Chen Jie
• Yu Chen-Hua
• Chen Hsien-Wei
• Yeh Der-Chyang

Classifications

• H10W72/552

  comprising metals or metalloids, e.g. silver · CPC title

• H10W90/28

  the stacked chips having different sizes, e.g. chip stacks having a pyramidal shape · CPC title

• H10W72/0198

  batch processes · CPC title

• H10W90/754

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W72/877

  Bump connectors and die-attach connectors · CPC title