AllnAsSb avalanche photodiode and related method thereof

Patent metadata

Field	Value
Publication number	US-10032950-B2
Application number	US-201715438870-A
Country	US
Kind code	B2
Filing date	Feb 22, 2017
Priority date	Feb 22, 2016
Publication date	Jul 24, 2018
Grant date	Jul 24, 2018

Abstract

An avalanche photodiode, and related method of manufacture and method of use thereof, that includes a first contact layer; a multiplication layer, wherein the multiplication layer includes AlInAsSb; a charge, wherein the charge layer includes AlInAsSb; an absorption, wherein the absorption layer includes AlInAsSb; a blocking layer; and a second contact layer.

First claim

We claim:

1. An avalanche photodiode comprising:
a first contact layer;
a multiplication layer adjacent to said first contact layer, wherein said multiplication layer comprises AlInAsSb;
a charge layer adjacent to the multiplication layer opposite said first contact layer, wherein said charge layer comprises AlInAsSb;
an absorption layer adjacent to said charge layer, opposite said multiplication layer, wherein said absorption layer comprises AlInAsSb;
a blocking layer adjacent to said absorption layer, opposite said charge layer; and
second contact layer adjacent said blocking layer, opposite said absorption layer.

2. The avalanche photodiode according to claim 1 , wherein said blocking layer comprises AlInAsSb.

3. The avalanche photodiode according to claim 2 , wherein said blocking layer comprises Al x In 1-x As y Sb 1-y with x=0.5 to 0.9.

4. The avalanche photodiode according to claim 1 , wherein said AlInAsSb absorption layer has a composition Al x In 1-x As y Sb 1-y with x=0.1 to x=0.6.

5. The avalanche photodiode according to claim 4 , wherein a thickness of said AlInAsSb absorption layer is approximately 100 nanometers to approximately 4,000 nanometers.

6. The avalanche photodiode according to claim 1 , wherein said AlInAsSb charge layer has a composition Al x In 1-x As y Sb 1-y with x=0.5 to 0.9.

7. The avalanche photodiode according to claim 1 , wherein said AlInAsSb multiplication layer has a composition Al x In 1-x As y Sb 1-y with x=0.9 to 0.5.

8. The avalanche photodiode according to claim 7 , wherein a thickness of said multiplication layer is approximately 100 nanometers to approximately 2,000 nanometers.

9. The avalanche photodiode according to any one of claim 3 , 4 , 6 , or 7 , wherein said Al x In 1-x As y Sb 1-y has a composition represented with y=x.

10. The avalanche photodiode according to claim 1 , further comprising:
a substrate layer positioned adjacent to said multiplication layer, opposite said charge layer.

11. The avalanche photodiode according to claim 10 , further comprising at least one contact in electrical communication respectively with said second contact layer and said substrate.

12. The avalanche photodiode according to claim 1 , wherein said substrate layer comprises InP.

13. The avalanche photodiode according to claim 1 , wherein said substrate layer comprises GaSb.

14. The avalanche photodiode according to claim 1 , further comprising:
a first graded bandgap layer and second graded bandgap layer adjacent to opposite sides of said AlInAsSb absorption layer, wherein
said first graded bandgap layer is between said AlInAsSb absorption layer and said AlInAsSb charge layer, and
said second graded bandgap layer is between said AlInAsSb absorption layer and said blocking layer.

15. The avalanche photodiode according to claim 14 , wherein said first graded bandgap layer comprises Al x In 1-x As y Sb 1-y .

16. The avalanche photodiode according to claim 15 , wherein:
said AlInAsSb absorption layer has a composition Al x In 1-x As y Sb 1-y ;
said multiplication layer has a composition Al x In 1-x As y Sb 1-y ; and
said Al x composition of said first graded bandgap layer is graded wherein x is between x of said Al x In 1-x As y Sb 1-y multiplication layer to x of said Al x In 1-x As y Sb 1-y absorption layer.

17. The avalanche photodiode according to claim 15 , further comprising:
a substrate layer positioned adjacent to said multiplication layer, opposite said charge layer, wherein said substrate comprises GaSb or InP, and
wherein the composition of said first graded bandgap is graded from the composition of said multiplication layer to that of said absorption layer, wherein said first graded bandgap is lattice matched to either said GaSb or InP substrate.

18. The avalanche photodiode according to claim 15 , further comprising:
a substrate layer positioned adjacent to said multiplication layer, opposite said charge layer, wherein said substrate comprises GaSb or InP, and
wherein the Al x In 1-x As y Sb 1-y composition of said first graded bandgap is graded between lattice matched to said GaSb substrate or said InP substrate.

19. The avalanche photodiode according to claim 14 , wherein said second graded bandgap layer comprises Al x In 1-x As y Sb 1-y .

20. The avalanche photodiode according to claim 19 , wherein:
said AlInAsSb absorption layer has a composition Al x In 1-x As y Sb 1-y ;
said blocking layer has a composition Al x In 1-x As y Sb 1-y ; and
the Al x composition of said second graded bandgap layer is graded wherein x is of said Al x In 1-x As y Sb 1-y ; blocking layer to x of said Al x In 1-x As y Sb 1-y absorption layer.

21. The avalanche photodiode according to claim 19 , further comprising:
a substrate layer positioned adjacent to said multiplication layer, opposite said charge layer, wherein said substrate comprises GaSb or InP, and
wherein the composition of said second graded bandgap is graded from the composition of said blocking layer to that of said absorption layer, wherein said second graded bandgap is lattice matched to either said GaSb or InP substrate.

22. The avalanche photodiode according to claim 19 , further comprising:
a substrate layer positioned adjacent to said multiplication layer, opposite said charge layer, wherein said substrate comprises GaSb or InP, and
wherein the Al x In 1-x As y Sb 1-y composition of said second graded bandgap is graded between lattice matched to said GaSb substrate or said InP substrate.

23. The avalanche photodiode according to claim 1 , wherein said first contact layer comprise comprises GaSb or InP.

24. The avalanche photodiode according to claim 1 , wherein said second contact layer comprise comprises GaSb or InP.

Assignees

• Univ Virginia Patent Foundation

Inventors

• Campbell Joe C
• Ren Min
• Woodson Madison
• Chen Yaojia
• Bank Seth
• Maddox Scott

Classifications

• H10P14/3422

  Antimonides · CPC title

• H01L21/02549

  Electricity · mapped topic

• H01L31/1075 Primary

  Electricity · mapped topic

• H01L31/03046

  Electricity · mapped topic

• H10F77/1248

  having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP · CPC title