Sputtering target, method of fabricating the same, and method of fabricating an organic light emitting display apparatus
US-2015031153-A1 · Jan 29, 2015 · US
US10032927B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10032927-B2 |
| Application number | US-201615374189-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 9, 2016 |
| Priority date | Mar 6, 2014 |
| Publication date | Jul 24, 2018 |
| Grant date | Jul 24, 2018 |
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An oxide sputtering target includes at least one of indium (In), zinc (Zn), tin (Sn), and gallium (Ga), and tungsten (W) in an amount from 0.005 mol % to 1 mol %.
Opening claim text (preview).
What is claimed is: 1. An oxide sputtering target comprising: at least one of indium (In), zinc (Zn), tin (Sn), and gallium (Ga); and niobium (Nb) in an amount from 0.01 mol % to 1 mol %. 2. The oxide sputtering target of claim 1 , wherein an indium content is from 10 mol % to 60 mol %, a zinc content is from 10 mol % to 65 mol %, and a tin content is from 0.1 mol % to 60 mol %. 3. The oxide sputtering target of claim 1 , wherein the oxide sputtering target comprises indium (In). 4. The oxide sputtering target of claim 1 , wherein the oxide sputtering target comprises zinc (Zn). 5. The oxide sputtering target of claim 1 , wherein the oxide sputtering target comprises tin (Sn). 6. The oxide sputtering target of claim 1 , wherein the oxide sputtering target comprises gallium (Ga).
Manufacturing of targets · CPC title
Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy · CPC title
Plural materials · CPC title
Electricity · mapped topic
Electricity · mapped topic
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