Copper alloy for electronic and electrical equipment, plastically worked copper alloy material for electronic and electrical equipment, and component and terminal for electronic and electrical equipment
US-2016160321-A1 · Jun 9, 2016 · US
US10032536B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10032536-B2 |
| Application number | US-201414291335-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 30, 2014 |
| Priority date | May 14, 2010 |
| Publication date | Jul 24, 2018 |
| Grant date | Jul 24, 2018 |
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One aspect of this copper alloy for an electronic device is composed of a binary alloy of Cu and Mg which includes Mg at a content of 3.3 to 6.9 atomic %, with a remainder being Cu and inevitable impurities, and a conductivity σ (% IACS) is within the following range when the content of Mg is given as A atomic %, σ≤{1.7241/(−0.0347×A 2 +0.6569×A+1.7)}×100. Another aspect of this copper alloy is composed of a ternary alloy of Cu, Mg, and Zn which includes Mg at a content of 3.3 to 6.9 atomic % and Zn at a content of 0.1 to 10 atomic %, with a remainder being Cu and inevitable impurities, and a conductivity σ (% IACS) is within the following range when the content of Mg is given as A atomic % and the content of Zn is given as B atomic %, σ≤{1.7241/(X+Y+1.7)}×100, X=−0.0347×A 2 +0.6569×A and Y=−0.0041×B 2 +0.2503×B.
Opening claim text (preview).
The invention claimed is: 1. A copper alloy for an electronic device, wherein the copper alloy is composed of a ternary alloy of Cu, Mg, and Zn, the ternary alloy comprises Mg at a content in a range of 3.3 to 6.9 atomic % and Zn at a content in a range of 0.1 to 10 atomic %, with a remainder being Cu and inevitable impurities, a conductivity σ (% IACS) satisfies the following relation when the content of Mg is given as A atomic % and the content of Zn is given as B atomic %, σ≤{1.7241/( X′+Y′+ 1.7)}×100 X′=− 0.0292× A 2 +0.6797× A Y′=− 0.0038× B 2 +0.2488× B , and the copper alloy substantially consists of a Cu—Mg—Zn solid solution alloy supersaturated with Mg. 2. A rolled copper alloy for an electronic device, which is composed of the copper alloy for an electronic device according to claim 1 , wherein a Young's modulus E is in a range of 125 GPa or less, and a 0.2% proof stress σ 0.2 is in a range of 400 MPa or more. 3. The rolled copper alloy for an electronic device according to claim 2 , wherein the rolled copper alloy is used as a copper material that constitutes a terminal, a connector, or a relay.
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