Semiconductor package and manufacturing method thereof
US-9589840-B2 · Mar 7, 2017 · US
US10026715B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10026715-B2 |
| Application number | US-201615064971-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 9, 2016 |
| Priority date | Mar 17, 2015 |
| Publication date | Jul 17, 2018 |
| Grant date | Jul 17, 2018 |
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Official abstract text for this publication.
A semiconductor device according to the present embodiment includes a semiconductor substrate, an insulating film and a conductive film. The insulating film is disposed on a first surface of the semiconductor substrate. The insulating film covers a semiconductor element. The conductive film penetrates the semiconductor substrate across from the first surface to a second surface opposite to the first surface. On the second surface, a trench continuously or intermittently exists across from a first end part side of the second surface to a second end part side thereof.
Opening claim text (preview).
The invention claimed is: 1. A semiconductor device comprising: a semiconductor substrate; an insulating film disposed on a first surface of the semiconductor substrate, the insulating film covering a semiconductor element; and a conductive film penetrating the semiconductor substrate across from the first surface to a second surface opposite to the first surface, a trench across from a first end part side of the second surface to a second end part side thereof. 2. The semiconductor device according to claim 1 , wherein the trench exists in a continuous grid shape. 3. The semiconductor device according to claim 1 , wherein a plurality of the trenches exist intermittently, and at least one of the plurality of trenches exists in a cross shape. 4. The semiconductor device according to claim 1 , wherein the trench exists over a whole surface of the second surface. 5. The semiconductor device according to claim 1 , wherein at least part of the trench penetrates the semiconductor substrate across from the first surface to the second surface. 6. The semiconductor device according to claim 1 , wherein the trench contains a bottomed groove. 7. The semiconductor device according to claim 1 , comprising a reinforcing film disposed inside the trench. 8. The semiconductor device according to claim 1 , comprising a plurality of the semiconductor substrates facing one another, wherein the conductive films are arranged in the plurality of semiconductor substrates so as to oppose each other, the semiconductor device comprising a joint between the conductive films that oppose each other. 9. The semiconductor device according to claim 7 , wherein the reinforcing film comprises Ti, TiN, W, Al, Ni, Cu, SiO2, SiN or SiON. 10. The semiconductor device according to claim 8 , wherein the semiconductor substrate is a silicon substrate. 11. The semiconductor device according to claim 1 , wherein the conductive film is a Through-Silicon Via. 12. The semiconductor device according to claim 1 , wherein the conductive film is supplied inside a through hole, the through hole being formed on the substrate. 13. The semiconductor device according to claim 1 , wherein the conductive film comprises Ni. 14. The semiconductor device according to claim 1 , wherein the conductive film is electrically connected to the semiconductor element. 15. The semiconductor device according to claim 1 , further comprising: a bump on the semiconductor element, and wherein the conductive film is electrically connected to the semiconductor element on a first side of the semiconductor element, and a bump is electrically connected to the semiconductor element on a second side opposite to the first side of the semiconductor element.
between stacked chips · CPC title
characterised by the through-semiconductor vias [TSVs] in the stacked chips · CPC title
the encapsulations exposing the passive side of the semiconductor body · CPC title
the substrate having spherical bumps for external connection · CPC title
Encapsulations, e.g. protective coatings · CPC title
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