Active-light-sensitive or radiation-sensitive resin composition, pattern forming method, and method for manufacturing electronic device

Patent metadata

Field	Value
Publication number	US-10025186-B2
Application number	US-201715444471-A
Country	US
Kind code	B2
Filing date	Feb 28, 2017
Priority date	Sep 3, 2014
Publication date	Jul 17, 2018
Grant date	Jul 17, 2018

Abstract

The present invention has an object to provide an active-light-sensitive or radiation-sensitive resin composition having high DOF and low LWR; a pattern forming method using the composition; and a method for manufacturing an electronic device. The active-light-sensitive or radiation-sensitive resin composition of the present invention includes a resin P and a compound that generates an acid upon irradiation with active light or radiation, in which the resin P has a repeating unit p1 and a repeating unit p2 represented by specific formulae, and the repeating unit p2 does not have a group in which a hydroxy group of a hydroxyadamantyl group is protected with a group that decomposes by the action of an acid to leave.

First claim

What is claimed is:

1. An active-light-sensitive or radiation-sensitive resin composition comprising:
a resin P; and
a compound that generates an acid upon irradiation with active light or radiation,
wherein the resin P includes a repeating unit p1 represented by the following General Formula (1) and a repeating unit p22 represented by the following General Formula (2-2), and
the repeating unit p22 does not have a group in which a hydroxy group of a hydroxyadamantyl group is protected with a group that decomposes by the action of an acid to leave,

in General Formula (1), R 1 represents a hydrogen atom or an organic group, R 2 represents a tertiary alkyl group, n 1 represents a positive integer, and * represents a binding position, and

in General Formula (2-2), R 31 represents a hydrogen atom or an organic group, R 32 , R 33 , and R 34 each independently represents a linear or branched alkyl group, and * represents a binding position.

2. The active-light-sensitive or radiation-sensitive resin composition according to claim 1 , wherein, in General Formula (2-2), the total number of carbon atoms of R 32 , R 33 and R 34 is 10 or less.

3. The active-light-sensitive or radiation-sensitive resin composition according to claim 2 , wherein, in General Formula (2-2), at least one of R 32 , R 33 , or R 34 is a linear or branched alkyl group having 2 or more carbon atoms.

4. The active-light-sensitive or radiation-sensitive resin composition according to claim 2 , wherein, in General Formula (2-2), at least two of R 32 , R 33 , or R 34 are a linear or branched alkyl group having 2 or more carbon atoms.

5. The active-light-sensitive or radiation-sensitive resin composition according to claim 2 , wherein, in General Formula (2-2), all of R 32 , R 33 , and R 34 are a linear or branched alkyl group having 2 or more carbon atoms.

6. The active-light-sensitive or radiation-sensitive resin composition according to claim 1 , wherein, in General Formula (2-2), at least one of R 32 , R 33 , or R 34 is a linear or branched alkyl group having 2 or more carbon atoms.

7. The active-light-sensitive or radiation-sensitive resin composition according to claim 1 , wherein, in General Formula (2-2), at least two of R 32 , R 33 , or R 34 are a linear or branched alkyl group having 2 or more carbon atoms.

8. The active-light-sensitive or radiation-sensitive resin composition according to claim 1 , wherein, in General Formula (2-2), all of R 32 , R 33 , and R 34 are a linear or branched alkyl group having 2 or more carbon atoms.

9. A pattern forming method comprising at least:
(i) a step of forming an active-light-sensitive or radiation-sensitive resin composition film on a substrate, using the active-light-sensitive or radiation-sensitive resin composition according to claim 1 ;
(ii) a step of irradiating the film with active light or radiation; and
(iii) a step of developing the film irradiated with active light or radiation using a developer.

10. The pattern forming method according to claim 9 , wherein the developer is a developer including an organic solvent.

11. A method for manufacturing an electronic device, comprising:
a step of preparing a substrate, wherein the substrate is
an inorganic substrate,
a coating type inorganic substrate, or
a substrate used in a process for manufacturing a semiconductor, in a process for manufacture of a circuit board, or in lithographic processes of photofabrication; and
a step of forming a pattern on the prepared substrate using the pattern forming method according to claim 9 .

12. A pattern forming method comprising at least:
(i) a step of forming an active-light-sensitive or radiation-sensitive resin composition film on a substrate, using the active-light-sensitive or radiation-sensitive resin composition according to claim 2 ;
(ii) a step of irradiating the film with active light or radiation; and
(iii) a step of developing the film irradiated with active light or radiation using a developer.

Assignees

• Fujifilm Corp

Inventors

• Goto Akiyoshi
• KOJIMA Masafumi
• Kato Keita
• OU Keiyu
• Shirakawa Michihiro

Classifications

• H10P76/2041

  Photolithographic processes · CPC title

• G03F7/325

  Non-aqueous compositions · CPC title

• C08F228/06

  by a heterocyclic ring containing sulfur · CPC title

• C08F220/282

  and containing two or more oxygen atoms · CPC title

• G03F7/32

  Liquid compositions therefor, e.g. developers · CPC title