Oxide film deposition method and oxide film deposition device

Patent metadata

Field	Value
Publication number	US-10016785-B2
Application number	US-201114131128-A
Country	US
Kind code	B2
Filing date	Sep 13, 2011
Priority date	Sep 13, 2011
Publication date	Jul 10, 2018
Grant date	Jul 10, 2018

Abstract

The present invention provides a method for forming an oxide film by which normal formation of an oxide film is always achieved without receiving an influence of a change in the atmosphere, a metal oxide film having a low resistance can be formed, and a high efficiency of film formation is obtained. In the present invention, a raw material solution containing an alkyl compound is formed into a mist and ejected to a substrate ( 100 ) in the atmosphere. Additionally, an oxidizing agent that exerts an oxidizing effect on the alkyl compound is supplied to the mist of the raw material solution. Through the above-described processes, an oxide film is formed on the substrate in the present invention.

First claim

The invention claimed is:

1. A method for forming an oxide film on a substrate, the method comprising:
(A) forming a raw material mist from a raw material solution comprising an alkyl compound, and ejecting the raw material mist to a substrate in the presence of atmosphere,
wherein the alkyl compound is selected from the group consisting of diethyl zinc, dimethyl zinc, dimethyl magnesium, diethyl magnesium, biscyclopentadienyl magnesium, trimethyl aluminum, triethyl aluminum, trimethyl gallium, triethyl gallium, trimethyl indium, triethyl indium, tetramethyl silane, tetraethyl silane, trimethyl silane, triethyl silane, dimethyl silane and diethyl silane;
(B) supplying an oxidizing agent that exerts an oxidizing effect on said alkyl compound to ejected raw material mist in a spotted manner toward the ejected raw material mist, to form an oxide film on the substrate, such that the raw material mist is mixed with the oxidizing agent in a mixing region located at a path through which the raw material mist is ejected and then goes toward an area smaller than an upper surface area of the substrate; and
(C) ejecting an inert gas to a surrounding area of the ejected raw material mist,
wherein:
the substrate does not include a substrate arranged in a reaction vessel;
a point from which the raw material mist is ejected is a greater distance from the upper surface of the substrate, compared to a point from which the oxidizing agent is supplied to the mixing region; and
the ejecting of the inert gas occurs such that the inert gas enters the mixing region at about the same angle as an angle at which the raw material mist enters the mixing region.

2. The method according to claim 1 , wherein the ejecting (A) comprises a mist generation process for forming the raw material solution into the raw material mist through an ultrasonic atomizing process.

3. The method according to claim 1 , wherein the oxidizing agent is selected from the group consisting of water, oxygen, hydrogen peroxide, ozone, nitric oxide, nitrous oxide, and nitrogen dioxide.

4. The method according to claim 1 , wherein the inert gas is either of nitrogen and a rare gas.

5. The method according to claim 1 , wherein the supplying (B) is adjusted to a desired amount the oxidizing agent.

6. The method of claim 1 , wherein the oxidizing agent is supplied to the mixing region via at least one supply port formed on an inclined surface relative to the angle at which the raw material mist enters the mixing region.

7. An oxide film formation apparatus, comprising:
a raw material mist ejection port configured to eject a misty raw material solution comprising an alkyl compound to a substrate arranged in the atmosphere;
an oxidizing agent supply port configured to supply an oxidizing agent that exerts an oxidizing effect on the alkyl compound in a spotted manner toward the mist of the raw material solution that has been ejected from the raw material mist ejection port; and
an inert gas ejection port arranged neighboring the raw material mist ejection port and configured to eject an inert gas,
wherein:
the substrate does not include a substrate arranged in a reaction vessel;
the mist of the raw material solution is mixed with the oxidizing agent in a mixing region located at a path through which the raw material mist is ejected and then goes toward an area smaller than an upper surface area of the substrate;
a point from which the raw material mist is ejected from the raw material mist ejection port is a greater distance from the upper surface of the substrate, compared to a point from which the oxidizing agent is supplied from the oxidizing agent supply port to the mixing region;
the inert gas ejection port is arranged such that the inert gas enters the mixing region at about the same angle as an angle at which the raw material mist enters the mixing region; and
the alkyl compound is selected from the group consisting of diethyl zinc, dimethyl zinc, dimethyl magnesium, diethyl magnesium, biscyclopentadienyl magnesium, trimethyl aluminum, triethyl aluminum, trimethyl gallium, triethyl gallium, trimethyl indium, triethyl indium, tetramethyl silane, tetraethyl silane, trimethyl silane, triethyl silane, dimethyl silane and diethyl silane.

8. The apparatus according to claim 7 , further comprising:
an ultrasonic atomizer configured to form raw material solution into a mist.

9. The apparatus according to claim 7 , wherein the raw material mist ejection port, the oxidizing agent supply port, and the inert gas ejection port are formed in the same nozzle.

10. The apparatus according to claim 7 , wherein the oxidizing agent is selected from the group consisting of water, oxygen, hydrogen peroxide, ozone, nitric oxide, nitrous oxide, and nitrogen dioxide.

11. The apparatus according to claim 7 , wherein the inert gas is either of nitrogen and a rare gas.

12. The apparatus according to claim 7 , further comprising:
a supply adjuster configured to adjust an amount of supply of the oxidizing agent.

13. The apparatus of claim 7 , wherein the oxidizing agent is supplied to the mixing region via at least one supply port formed on an inclined surface relative to the angle at which the raw material mist enters the mixing region.

Assignees

• Orita Hiroyuki
• Shirahata Takahiro
• Hiramatsu Takahiro
• Toshiba Mitsubishi Elec Ind

Inventors

• Orita Hiroyuki
• Shirahata Takahiro
• Hiramatsu Takahiro

Classifications

• C23C16/452

  by activating reactive gas streams before {their} introduction into the reaction chamber, e.g. by {ionisation} or addition of reactive species · CPC title

• B05D3/0466

  the gas being a non-reacting gas (B05D3/0406 takes precedence) · CPC title

• C23C16/4486

  by producing an aerosol and subsequent evaporation of the droplets or particles · CPC title

• B05D3/0453 Primary

  After-treatment · CPC title

• C23C16/40

  Oxides · CPC title