Optical semiconductor device and method for making the device

Patent metadata

Field	Value
Publication number	US-10014437-B2
Application number	US-201715452543-A
Country	US
Kind code	B2
Filing date	Mar 7, 2017
Priority date	Mar 26, 2015
Publication date	Jul 3, 2018
Grant date	Jul 3, 2018

Abstract

An optical semiconductor device comprises, on a substrate, a fin of diamond-cubic semiconductor material and, at the base of the fin, a slab of that semiconductor material, in a diamond-hexagonal structure, that extends over the full width of the fin, the slab being configured as an optically active material. This semiconductor material can contain silicon. A method for manufacturing the optical semiconductor device comprises annealing the sidewalls of the fin, thereby inducing a stress gradient along the width of the fin.

First claim

What is claimed is:

1. An optical semiconductor device comprising:
a fin on a substrate, wherein the fin comprises a semiconductor material having a diamond-cubic structure, wherein the fin is sandwiched in between a first confined space and a second confined space, wherein a width of the first confined space is smaller than a width of the second confined space; and
a slab of the semiconductor material having a diamond-hexagonal structure, wherein the slab is situated across a full width of the fin at a base of the fin, wherein the slab has a thickness of from 2 nm to 50 nm.

2. The optical semiconductor device of claim 1 , wherein the semiconductor material is selected from the group consisting of Si and Si x Ge 1-x wherein 0<x<1.

3. The optical semiconductor device of claim 1 , wherein the fin comprises a step at a side of the first confined space and a bulge at a side of the second confined space, wherein the step is adjacent to the slab.

4. The optical semiconductor device of claim 1 , wherein the first confined space is adjacent to a first major sidewall of the fin and the second confined space is adjacent to a second major sidewall of the fin.

5. The optical semiconductor device of claim 4 , wherein the first major sidewall and the second major sidewall are oxidized.

6. The optical semiconductor device of claim 1 , wherein at least one of the first confined space and the second confined space is confined by the fin and another major sidewall of another fin.

7. The optical semiconductor device of claim 6 , wherein the another fin is patterned together with the fin.

8. The optical semiconductor device of claim 7 , comprising an array of fins, wherein a width of the confined spaces between fins gradually increases along the array of fins.

9. The optical semiconductor device of claim 8 , wherein a width between each fin increases by at least 8 nm from one fin to the next fin in the array of fins.

10. The optical semiconductor device of claim 1 , wherein a width at the base of the fin is smaller than 50 nm.

11. The optical semiconductor device of claim 1 , comprising an array of fins, wherein confined spaces between the fins have different widths.

12. The optical semiconductor device of claim 1 , wherein the semiconductor slab is an optically active material.

Assignees

• Imec Vzw
• Univ Leuven Kath

Inventors

• Bender Hugo
• Qiu Yang

Classifications

• H10P14/2926

  Crystal orientations · CPC title

• H10P14/2905

  Silicon, silicon germanium or germanium · CPC title

• H10W10/0143

  comprising concurrently refilling multiple trenches having different shapes or dimensions · CPC title

• H10W10/17

  formed using trench refilling with dielectric materials, e.g. shallow trench isolations · CPC title

• H10W10/014

  using trench refilling with dielectric materials, e.g. shallow trench isolations · CPC title