Semiconductor device having resistance elements and fabrication method thereof

Patent metadata

Field	Value
Publication number	US-10014363-B2
Application number	US-201715402367-A
Country	US
Kind code	B2
Filing date	Jan 10, 2017
Priority date	Feb 19, 2016
Publication date	Jul 3, 2018
Grant date	Jul 3, 2018

Abstract

A semiconductor device includes as a resistance element a first polycrystalline silicon and a second polycrystalline silicon containing impurities, such as boron, of the same kind and having different widths. The first polycrystalline silicon contains the impurities at a concentration C X . The second polycrystalline silicon has a width larger than a width of the first polycrystalline silicon and contains the impurities of the same kind at a concentration C Y lower than the concentration C X . A sign of a temperature coefficient of resistance (TCR) of the first polycrystalline silicon changes at the concentration C X . A sign of a TCR of the second polycrystalline silicon changes at the concentration C Y .

First claim

What is claimed is:

1. A semiconductor device comprising:
a first polycrystalline silicon containing first impurities at a first concentration and having a first width; and
a second polycrystalline silicon containing the first impurities at a second concentration lower than the first concentration and having a second width larger than the first width,
wherein:
a sign of a temperature coefficient of the first polycrystalline silicon changes at the first concentration;
a sign of a temperature coefficient of the second polycrystalline silicon changes at the second concentration; and
the first polycrystalline silicon and the second polycrystalline silicon are formed as continuous one body and electrically connected.

2. The semiconductor device according to claim 1 , wherein the first concentration and the second concentration are higher than or equal to 1×10 20 cm −3 and lower than or equal to 1×10 21 cm −3 .

3. The semiconductor device according to claim 1 , wherein the first impurities are p-type impurities.

4. The semiconductor device according to claim 1 , wherein the first polycrystalline silicon and the second polycrystalline silicon are electrically connected in series.

5. A semiconductor device comprising:
a first polycrystalline silicon containing first impurities at a first concentration and having a first width; and
a second polycrystalline silicon containing the first impurities at a second concentration lower than the first concentration and having a second width larger than the first width,
wherein:
a sign of a temperature coefficient of the first polycrystalline silicon changes at the first concentration;
a sign of a temperature coefficient of the second polycrystalline silicon changes at the second concentration; and
a first sheet resistance of the first polycrystalline silicon and a second sheet resistance of the second polycrystalline silicon are equal or almost equal.

6. The semiconductor device according to claim 5 , wherein the first concentration and the second concentration are higher than or equal to 1×10 20 cm −3 and lower than or equal to 1×10 21 cm −3 .

7. The semiconductor device according to claim 5 , wherein the first polycrystalline silicon and the second polycrystalline silicon are formed as continuous one body and electrically connected.

8. The semiconductor device according to claim 5 , wherein the first impurities are p-type impurities.

9. The semiconductor device according to claim 7 , wherein the first polycrystalline silicon and the second polycrystalline silicon are electrically connected in series.

Assignees

• Mie Fujitsu Semiconductor Ltd

Inventors

• Ema Taiji
• Misawa Nobuhiro
• Kumeno Kazuyuki
• Yasuda Makoto

Classifications

• H10D62/10 Primary

  Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies · CPC title

• H10D84/817

  Combinations of field-effect devices and resistors only · CPC title

• H10W44/401

  Resistive arrangements (H10W44/20, H10W42/80 take precedence) · CPC title

• H01L28/20 Primary

  Electricity · mapped topic

• H01L27/0629

  Electricity · mapped topic