Pattern formation method

Patent metadata

Field	Value
Publication number	US-10014182-B2
Application number	US-201615263734-A
Country	US
Kind code	B2
Filing date	Sep 13, 2016
Priority date	Feb 29, 2016
Publication date	Jul 3, 2018
Grant date	Jul 3, 2018

Abstract

According to one embodiment, a pattern formation method includes forming a base structure including first and second guide portions each including a pinning portion, and a neutral portion, forming a block copolymer film containing first and second polymers on the bass structure, performing a predetermined treatment for the block copolymer film, thereby forming first and second pattern portions formed of the first polymer, forming third and fourth pattern portions formed of the second polymer, and forming a fifth pattern portion formed of the first and second polymers. The fifth pattern portion includes a plurality of first portions formed of the second polymer, and a second portion formed of the first polymer and provided on the neutral portion and the first portions.

First claim

What is claimed is:

1. A pattern formation method comprising:
forming a base structure on an underlying region, the base structure including first and second guide portions each including a pinning portion having a higher affinity for a first polymer than for a second polymer, and each extending in a first direction, and a neutral portion located between the first and second guide portions and having an affinity for the first and second polymers;
forming a block copolymer film containing the first and second polymers on the base structure;
performing a predetermined treatment for the block copolymer film, thereby forming first and second pattern portions formed of the first polymer on the first and second guide portions, respectively, forming third and fourth pattern portions formed of the second polymer on the neutral portion, and forming a fifth pattern portion formed of the first and second polymers between the third and fourth pattern portions, the fifth pattern portion including a plurality of first portions formed of the second polymer, and a second portion formed of the first polymer and provided on the neutral portion and the first portions; and
removing the first and second pattern portions and the second portion of the fifth pattern portion to form first and second trench patterns and a plurality of first hole patterns,
wherein performing the predetermined treatment for the block copolymer film, thereby forming the first, second, third, fourth, and fifth pattern portions includes:
forming an interposing portion formed of the first polymer between the third pattern portion and the neutral portion, between the fourth pattern portion and the neutral portion, and between the first portion of the fifth pattern portion and the neutral portion.

2. The method of claim 1 , wherein the first portions of the fifth pattern portion are periodically arranged in the first direction.

3. The method of claim 1 , wherein the first hole patterns are periodically arranged in the first direction.

4. The method of claim 1 , wherein each of the first hole patterns is surrounded by the third and fourth pattern portions and adjacent first portions of the fifth pattern portion.

5. The method of claim 1 , wherein the interposing portion includes a portion extending from the first pattern portion, and a portion extending from the second pattern portion.

6. The method of claim 1 , wherein removing the first and second pattern portions and the second portion of the fifth pattern portion to form the first and second trench patterns and the plurality of first hole patterns includes removing the first and second guide portions and a part of the neutral portion.

7. The method of claim 1 , wherein the first and second guide portions are formed of a resist.

8. The method of claim 1 , wherein the first and second guide portions have a same width.

9. The method of claim 1 , wherein a pitch between the first and second guide portions is deviated from an integral multiple of L 0 , where L 0 is twice a length of one unit of a block copolymer formed by bonding of one molecule of the first polymer and one molecule of the second polymer.

10. The method of claim 1 , wherein the first polymer is polymethyl methacrylate (PMMA), and the second polymer is polystyrene (PS).

11. The method of claim 1 , wherein the predetermined treatment includes heat treatment.

12. The method of claim 1 , wherein the first, second, third, fourth, and fifth pattern portions are formed by controlling at least one of a width of each of the first and second guide portions, a pitch between the first and second guide portions, a length of one unit of a block copolymer formed by bonding of one molecule of the first polymer and one molecule of the second polymer, a thickness of each of the first and second guide portions, an angle of a side surface of each of the first and second guide portions, a thickness of the block copolymer film, a water contact angle of the neutral portion, a water contact angle of the pinning portion of the first and second guide portions, a condition of the predetermined treatment, and addition of an additive to the block copolymer film.

13. The method of claim 1 , wherein performing the predetermined treatment for the block copolymer film, thereby forming the first, second, third, fourth, and fifth pattern portions includes forming a horizontal lamellar orientation portion on the underlying region.

14. A pattern formation method comprising:
forming a base structure on an underlying region, the base structure including first and second guide portions each including a pinning portion having a higher affinity for a first polymer than for a second polymer, and each extending in a first direction, and a neutral portion located between the first and second guide portions and having an affinity for the first and second polymers;
forming a block copolymer film containing the first and second polymers on the base structure;
performing a predetermined treatment for the block copolymer film, thereby forming first and second pattern portions formed of the first polymer on the first and second guide portions, respectively, forming third and fourth pattern portions formed of the second polymer on the neutral portion, and forming a fifth pattern portion formed of the first and second polymers between the third and fourth pattern portions, the fifth pattern portion including a plurality of first portions formed of the second polymer, and a second portion formed of the first polymer and provided on the neutral portion and the first portions; and
removing the first and second pattern portions and the second portion of the fifth pattern portion to form first and second trench patterns and a plurality of first hole patterns,
wherein forming the base structure includes forming a resist pattern on the underlying region, slimming the resist pattern, forming the pinning portion on a surface of the slimmed resist pattern, and forming the neutral portion on the underlying region which is not covered with the slimmed resist pattern.

15. A pattern formation method comprising:
forming a base structure on an underlying region, the base structure including first and second guide portions each including a pinning portion having a higher affinity for a first polymer than for a second polymer, and each extending in a first direction, and a neutral portion located between the first and second guide portions and having an affinity for the first and second polymers;
forming a block copolymer film containing the first and second polymers on the base structure;
performing a predetermined treatment for the block copolymer film, thereby forming first and second pattern portions formed of the first polymer on the first and second guide portions, respectively, forming third and fourth pattern portions formed of the second polymer on the neutral portion, and forming a fifth pattern portion formed of the first and second polymers between the third and fourth pattern portions, the fifth pattern portion including a plurality of first portions formed of the second polymer, and a second portion formed of the first polymer and provided on the neutral portion and the first portions; and
removing the first and second pattern portions and the second portion of the fifth pattern portion to form first and second trench patterns and a plurality of first hole patterns,
wherein
the first, third, fifth, fourth, and second pattern portions are arranged in this order in a second direction perpendicular to the first direction,
performing the predetermined treatment for the block copolymer film, thereby formin

Assignees

• Toshiba Kk

Inventors

• Seino Yuriko

Classifications

• H10P76/4088

  Processes for improving the resolution of the masks · CPC title

• H10P76/4085

  characterised by the processes involved to create the masks · CPC title

• H10P76/204

  of organic photoresist masks · CPC title

• H10P50/696

  Process specially adapted to improve the resolution of the mask · CPC title

• H10P50/73

  using masks for insulating materials · CPC title