Method for differential heating of elongate nano-scaled structures

Patent metadata

Field	Value
Publication number	US-10014178-B2
Application number	US-201615354489-A
Country	US
Kind code	B2
Filing date	Nov 17, 2016
Priority date	Dec 21, 2015
Publication date	Jul 3, 2018
Grant date	Jul 3, 2018

Abstract

The present disclosure is related to a method of fabricating a semiconductor device involving the production of at least two non-parallel nano-scaled structures on a substrate. These structures are heated to different temperatures by exposing them simultaneously to polarized light having a wavelength and polarization such that a difference in absorption of light occurs in the first and second nanostructure. In some cases the light is polarized in a plane that is parallel to one of the structures. The present disclosure may provide differential heating of semiconductor structures of different materials, such as Ge and Si fins.

First claim

The invention claimed is:

1. A method for manufacturing a semiconductor device, the method comprising:
providing a semiconductor substrate;
producing, on the semiconductor substrate, at least one first elongate nanostructure oriented along a first axis and at least one second elongate nanostructure oriented along a second axis, the two axes being differently oriented one to the other;
heating the first and second nanostructures to different temperatures by (i) applying, to the first and second nanostructures at a first time, light having a wavelength and having a plane of polarization such that a difference in absorption of light occurs in the first and second nanostructures, thereby heating the first nanostructure to a first temperature, (ii) rotating the semiconductor substrate relative to the plane of polarization or rotating the plane of polarization relative to the semiconductor substrate, and (iii) after rotating the semiconductor substrate or the plane of polarization, applying the light to the first and second nanostructures at a second time, thereby heating the second nanostructure to a second temperature.

2. The method according to claim 1 , wherein the first and second axes are perpendicular with respect to each other.

3. The method according to claim 1 , wherein a polarization plane of the light is parallel to the first or second axis.

4. The method according to claim 1 , wherein a polarization plane of the light is oriented with respect to the first nanostructure at a first angle, and with respect to the second nanostructure at a second angle, wherein the first angle and second angle are different.

5. The method according to claim 1 , wherein the first nanostructure comprises a different material than a material of the second nanostructure.

6. The method according to claim 5 , wherein the first and second nanostructures are semiconductor fins comprising mutually different semiconductor materials.

7. The method according to claim 6 , wherein the semiconductor materials are chosen from a list comprising Si, Ge, SiGe, and III-V material.

8. The method according to claim 1 , wherein the first and second nanostructures are nanotubes, nanowires or nanofibers.

9. The method according claim 1 , wherein the wavelength of the light is between 10 and 30 times a width of the first or second elongate nanostructure.

10. The method according to claim 1 , wherein the wavelength of the light is between 157 nm and 1060 nm.

11. The method according to claim 1 , wherein the heating is applied for activating dopant elements implanted in the nanostructures.

12. The method according to claim 1 , wherein the heating is applied for recrystallization of the nanostructures.

13. The method according to claim 1 , wherein the wavelength of the light is selected based on a dielectric function of a material of the first or second nanostructure.

14. The method according to claim 13 , wherein the wavelength of the light is selected to such that the dielectric function of a material of the first or second nanostructure is at a maximum.

15. The method according to claim 1 , wherein one of the first and second nanostructures does not extend out of a surface of the semiconductor substrate.

16. The method according to claim 1 , wherein the wavelength is a first wavelength, and wherein heating the elongate nanostructures to different temperatures further comprises:
after applying the light having the first wavelength at the first time, applying light having a second wavelength to the elongate nanostructures at the second time.

Assignees

• Imec Vzw

Inventors

• Vandervorst Wilfried
• Bogdanowicz Janusz

Classifications

• H10P32/1404

  using predeposition followed by drive-in of impurities into the semiconductor surface, e.g. predeposition from a gaseous phase · CPC title

• H10P32/174

  being Group III-V material · CPC title

• H10P32/171

  being group IV material · CPC title

• H10P14/3808

  using laser beams · CPC title

• H10P32/14

  within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase · CPC title