SiC substrate treatment method

Patent metadata

Field	Value
Publication number	US-10014176-B2
Application number	US-201515527602-A
Country	US
Kind code	B2
Filing date	Nov 17, 2015
Priority date	Nov 18, 2014
Publication date	Jul 3, 2018
Grant date	Jul 3, 2018

Abstract

Provided is a SiC substrate treatment method for, with respect to a SiC substrate ( 40 ) that has, on its surface, grooves ( 41 ), activating ions while preventing roughening of the surface of the substrate. In the method, an ion activation treatment in which the SiC substrate ( 40 ) is heated under Si vapor pressure is performed to the SiC substrate ( 40 ) has, on its surface, an ion implantation region ( 46 ) in which ions have been implanted, and has the grooves ( 41 ) provided in a region including at least the ion implantation region ( 46 ), thereby ions that are implanted in the SiC substrate ( 40 ) is activated while etching the surface of the substrate.

First claim

The invention claimed is:

1. A SiC substrate treatment method for, with respect to a SiC substrate that has, on its surface, an ion implantation region in which ions are implanted and has grooves provided in a region including at least the ion implantation region, performing an ion activation treatment in which the SiC substrate is heated under Si vapor pressure thereby activating ions that are implanted in the SiC substrate while etching the surface of the SiC substrate.

2. The SiC substrate treatment method according to claim 1 , wherein
the ion activation treatment is performed in a state where the SiC substrate is positioned at an internal space of a heat treatment container,
the heat treatment container includes a tantalum metal, and has a tantalum carbide layer provided on the internal space side of the tantalum metal, and a tantalum silicide layer provided on the side further toward the internal space than the tantalum carbide layer.

3. The SiC substrate treatment method according to claim 1 , wherein
the grooves provided on the SiC substrate are grooves for isolating the SiC substrate.

4. The SiC substrate treatment method according to claim 3 , wherein
the ion activation treatment is performed in a state where the SiC substrate is positioned at an internal space of a heat treatment container,
the heat treatment container includes a tantalum metal, and has a tantalum carbide layer provided on the internal space side of the tantalum metal, and a tantalum silicide layer provided on the side further toward the internal space than the tantalum carbide layer.

5. The SiC substrate treatment method according to claim 1 , wherein
an ion implantation treatment for implanting ions in a SiC substrate that has, on its surface, an epitaxial layer of a single crystal SiC and has grooves provided at least on the epitaxial layer, is performed prior to the ion activation treatment.

6. The SiC substrate treatment method according to claim 5 , wherein
the ion activation treatment is performed in a state where the SiC substrate is positioned at an internal space of a heat treatment container,
the heat treatment container includes a tantalum metal, and has a tantalum carbide layer provided on the internal space side of the tantalum metal, and a tantalum silicide layer provided on the side further toward the internal space than the tantalum carbide layer.

7. The SiC substrate treatment method according to claim 1 , wherein
the ion activation treatment is performed under Si and inert gas atmosphere, at a total Si and inert gas pressure of 10 Pa or more and 100 kPa or less.

8. The SiC substrate treatment method according to claim 7 , wherein
the ion activation treatment is performed in a state where the SiC substrate is positioned at an internal space of a heat treatment container,
the heat treatment container includes a tantalum metal, and has a tantalum carbide layer provided on the internal space side of the tantalum metal, and a tantalum silicide layer provided on the side further toward the internal space than the tantalum carbide layer.

9. The SiC substrate treatment method according to claim 1 , wherein
the ion activation treatment is performed at 10 −7 Pa or more and 10 −2 Pa or less.

10. The SiC substrate treatment method according to claim 9 , wherein
the ion activation treatment is performed in a state where the SiC substrate is positioned at an internal space of a heat treatment container,
the heat treatment container includes a tantalum metal, and has a tantalum carbide layer provided on the internal space side of the tantalum metal, and a tantalum silicide layer provided on the side further toward the internal space than the tantalum carbide layer.

11. The SiC substrate treatment method according to claim 1 , wherein
the ion activation treatment is performed under Si and inert gas atmosphere, at a total Si and inert gas pressure of 10 −2 Pa or more and 10 Pa or less.

12. The SiC substrate treatment method according to claim 11 , wherein
the ion activation treatment is performed in a state where the SiC substrate is positioned at an internal space of a heat treatment container,
the heat treatment container includes a tantalum metal, and has a tantalum carbide layer provided on the internal space side of the tantalum metal, and a tantalum silicide layer provided on the side further toward the internal space than the tantalum carbide layer.

Assignees

• Toyo Tanso Co

Inventors

• Yabuki Norihito
• Torimi Satoshi
• Nogami Satoru

Classifications

• H10P72/0436

  mainly by radiation · CPC title

• H10P95/906

  for altering the shape of semiconductors, e.g. smoothing the surface · CPC title

• H10P72/18

  characterised by being specially adapted for supporting a single substrate or by comprising a stack of such individual supports · CPC title

• H10P50/242

  of Group IV materials · CPC title

• H10P50/00 Primary

  Etching of wafers, substrates or parts of devices · CPC title