Semiconductor device including a silicon nitride dielectric layer and method for producing same

Patent metadata

Field	Value
Publication number	US-10012883-B2
Application number	US-201515117524-A
Country	US
Kind code	B2
Filing date	Feb 2, 2015
Priority date	Feb 10, 2014
Publication date	Jul 3, 2018
Grant date	Jul 3, 2018

Abstract

A semiconductor device ( 100 A) includes a substrate ( 11 ); a TFT ( 10 A) supported on the substrate, the TFT including an oxide semiconductor layer ( 16 ); an organic insulating layer ( 24 ) covering the TFT; a lower layer electrode ( 32 ) on the organic insulating layer; a dielectric layer ( 34 ) on the lower layer electrode; an upper layer electrode on the dielectric layer; and an upper layer electrode ( 36 ) including a portion opposing the lower layer electrode via the dielectric layer. The dielectric layer is a silicon nitride film having a hydrogen content of 5.33×10 21 atoms/cm 3 or less.

First claim

The invention claimed is:

1. A production method of a semiconductor device comprising:
step (a) of providing a substrate;
step (b) of forming a thin film transistor on the substrate, the thin film transistor including an oxide semiconductor layer;
step (c) of forming an organic insulating layer covering the thin film transistor;
step (d) of forming a lower layer electrode on the organic insulating layer;
step (e) of forming a dielectric layer on the lower layer electrode; and
step (f) of forming an upper layer electrode on the dielectric layer, wherein
step (e) is a step of forming a silicon nitride film as the dielectric layer, and is performed under film formation conditions such that the silicon nitride film has a hydrogen content of 5.33×10 21 atoms/cm 3 or less, and
step (e) is performed by a plasma CVD technique, using a gaseous mixture containing SiH 4 and also containing NH 3 and/or N 2 , under film formation conditions defined by: an intra-chamber pressure of not less than 1200 mTorr and not more than 1500 mTorr; a substrate temperature of not less than 180° C. and not more than 220° C.; an inter-electrode distance of not less than 18 mm and not more than 25 mm; a ratio of the flow rate of SiH 4 to a total flow rate of the gaseous mixture being not less than 3% and not more than 5%; and a power density of 0.36 W/cm 2 or more.

2. The production method of a semiconductor device of claim 1 , wherein step (e) is performed with a power density of 0.49 W/cm 2 or less.

Assignees

• Sharp Kk

Inventors

• Kanzaki Yohsuke
• Kaneko Seiji
• Saitoh Takao
• Takamaru Yutaka
• Ide Keisuke

Classifications

• H10P14/69433 Primary

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/6682

  the compound being a silane, e.g. disilane, methylsilane or chlorosilane · CPC title

• H10P14/6336

  in the presence of a plasma [PECVD] · CPC title

• H01L29/66969

  Electricity · mapped topic

• H01L29/78696

  Electricity · mapped topic