Apparatus and process of electro-chemical plating

Patent metadata

Field	Value
Publication number	US-10011918-B2
Application number	US-201414581876-A
Country	US
Kind code	B2
Filing date	Dec 23, 2014
Priority date	Dec 23, 2014
Publication date	Jul 3, 2018
Grant date	Jul 3, 2018

Abstract

An electro-chemical plating process begins with supplying a supercritical fluid into an electroplating solution to be deposited, and a bias is applied between a substrate and an electrode, which is located in the electroplating solution. The substrate is placed into the electroplating solution to deposit a material on the substrate.

First claim

What is claimed is:

1. An electro-chemical plating (ECP) process, comprising:
filtering a substance in a liquid state to remove impurities in the substance;
pressurizing and heating the substance to form a supercritical fluid;
supplying the supercritical fluid into an electroplating solution;
applying a bias between a substrate and an electrode, wherein the electrode is located in the electroplating solution; and
placing the substrate into the electroplating solution with the supercritical fluid to deposit a material on the substrate.

2. The ECP process of claim 1 , wherein the electroplating solution comprises a plurality of ions of the material.

3. The ECP process of claim 2 , wherein the bias promotes diffusion of the ions of the material towards the substrate, and the ions are reduced to form the material on the substrate.

4. The ECP process of claim 1 , wherein the substrate acts as a cathode, and the electrode acts as an anode during applying the bias between the substrate and the electrode.

5. The ECP process of claim 1 , wherein the substrate is placed into the electroplating solution substantially parallel to a surface of the electroplating solution.

6. The ECP process of claim 1 , wherein the supercritical fluid is a substance at a temperature and pressure above a critical point of the substance.

7. The ECP process of claim 6 , wherein the substance is selected from the group consisting of carbon dioxide, xenon, argon, helium, krypton, nitrogen, methane, ethane, propane, pentane, ethylene, methanol, ethanol, isopropanol, isobutanol, cyclohexanol, ammonia, nitrous oxide, oxygen, silicon hexafluoride, methyl fluoride, chlorotrifluoromethane, and water.

8. The ECP process of claim 1 , wherein the pressurizing and heating the substance to form the supercritical fluid comprises:
heating the substance to a temperature above a critical temperature of the substance; and
pressurizing the substance to a pressure above a critical pressure of the substance to transform the substance from the liquid state into a supercritical fluid state to form the supercritical fluid.

9. An electro-chemical plating (ECP) process, comprising:
providing a substance in a liquid state
filtering impurities in the substance;
after filtering the impurities in the substance, transforming the substance to a supercritical fluid;
mixing the supercritical fluid and an electroplating solution to form a mixture;
submerging a substrate into the mixture; and
electroplating the substrate to deposit a material on a surface of the substrate.

10. The ECP process of claim 9 , wherein the mixture comprises a plurality of ions of the material.

11. The ECP process of claim 9 , wherein the surface of the substrate is substantially parallel to an upper surface of the mixture when submerging the substrate into the mixture.

12. The ECP process of claim 9 , wherein the supercritical fluid is a substance at a temperature and a pressure above a critical point of the substance.

13. The ECP process of claim 12 , wherein the substance is selected from the group consisting of carbon dioxide, xenon, argon, helium, krypton, nitrogen, methane, ethane, propane, pentane, ethylene, methanol, ethanol, isopropanol, isobutanol, cyclohexanol, ammonia, nitrous oxide, oxygen, silicon hexafluoride, methyl fluoride, chlorotrifluoromethane, and water.

14. The ECP process of claim 9 , wherein the impurities are filtered with a filter, and the filter comprises activated carbon or aluminium oxide.

15. The ECP process of claim 9 , wherein transforming the substance to the supercritical fluid comprises:
heating the substance to a temperature above a critical temperature of the substance; and
pressurizing the substance to a pressure above a critical pressure of the substance to transform the substance from the liquid state into a supercritical fluid state to form the supercritical fluid.

16. The ECP process of claim 9 , wherein electroplating the substrate comprises:
providing an electrode in the mixture; and
providing a bias between the substrate and the electrode with a power supply electrically connected with the electrode and the substrate to form the material.

17. An electro-chemical plating (ECP) process, comprising:
when a substance is in a liquid state, filtering impurities in the substance;
after filtering the impurities, heating and pressurizing the substance to form a supercritical fluid;
supplying the supercritical fluid into an electroplating solution to form a mixture; and
electroplating a substrate using the mixture.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Changchien Ying-Hsueh
• Lee Yu-Ming
• Yang Chi-Ming

Classifications

• C25D5/003

  Electroplating using gases, e.g. pressure influence · CPC title

• C25D21/02

  Heating or cooling · CPC title

• C25D21/06 Primary

  Filtering {particles other than ions (filtering ions C25D21/22)} · CPC title

• C25D21/18

  of electrolytes (C25D21/22 takes precedence) · CPC title

• C25D3/02

  from solutions (C25D5/34 - C25D5/46 take precedence) · CPC title