Semiconductor device, method for manufacturing the same, or display device including the same

Patent metadata

Field	Value
Publication number	US-10008609-B2
Application number	US-201615070306-A
Country	US
Kind code	B2
Filing date	Mar 15, 2016
Priority date	Mar 17, 2015
Publication date	Jun 26, 2018
Grant date	Jun 26, 2018

Abstract

To suppress a change in electrical characteristics and improve reliability in a transistor including an oxide semiconductor film. Provided is a semiconductor device including a transistor including a first gate electrode, a first insulating film over the first gate electrode, a first oxide semiconductor film over the first insulating film, a source electrode electrically connected to the first oxide semiconductor film, a drain electrode electrically connected to the first oxide semiconductor film, a second insulating film over the first oxide semiconductor film, a second oxide semiconductor film as a second gate electrode over the second insulating film, and a third insulating film over the second oxide semiconductor film. The second insulating film includes an excess oxygen region having a concentration gradient.

First claim

What is claimed is:

1. A semiconductor device comprising:
a transistor including:
a first gate electrode;
a first insulating film over the first gate electrode;
a first oxide semiconductor film over the first insulating film;
a source electrode electrically connected to the first oxide semiconductor film;
a drain electrode electrically connected to the first oxide semiconductor film;
a second insulating film over the first oxide semiconductor film;
a second oxide semiconductor film as a second gate electrode over the second insulating film; and
a third insulating film over the second oxide semiconductor film,
wherein the second insulating film includes an excess oxygen region having a concentration gradient.

2. The semiconductor device according to claim 1 ,
wherein the third insulating film includes one of or both nitrogen and hydrogen.

3. The semiconductor device according to claim 1 ,
wherein the first oxide semiconductor film includes In, M and Zn, and
wherein M is Al, Ga, Y, or Sn.

4. The semiconductor device according to claim 1 ,
wherein the second oxide semiconductor film includes In and M, and
wherein M is Al, Ga, Y, or Sn.

5. The semiconductor device according to claim 1 ,
wherein the first oxide semiconductor film has a multilayer structure.

6. The semiconductor device according to claim 1 ,
wherein the first oxide semiconductor film includes a crystal part, and
wherein the crystal part has c-axis alignment.

7. The semiconductor device according to claim 1 ,
wherein the first gate electrode and the second gate electrode are electrically connected to each other.

8. A display device comprising:
the semiconductor device according to claim 1 ; and
a display element.

9. A display module comprising:
the display device according to claim 8 ; and
a touch sensor.

10. An electronic device comprising:
the semiconductor device according to claim 1 ;
at least one of the display device according to claim 8 and the display module according to claim 9 ; and
at least one of an operation key and a battery.

11. A semiconductor device comprising:
a transistor including:
a first gate electrode;
a first insulating film over the first gate electrode;
a first oxide semiconductor film over the first insulating film;
a source electrode electrically connected to the first oxide semiconductor film;
a drain electrode electrically connected to the first oxide semiconductor film;
a second insulating film over the first oxide semiconductor film;
a second oxide semiconductor film as a second gate electrode over the second insulating film; and
a third insulating film over the second oxide semiconductor film,
wherein the second insulating film includes an excess oxygen region having a concentration gradient, and
wherein the excess oxygen region has a region in which an oxygen concentration increases toward an upper surface of the second insulating film.

12. The semiconductor device according to claim 11 ,
wherein the third insulating film includes one of or both nitrogen and hydrogen.

13. The semiconductor device according to claim 11 ,
wherein the first oxide semiconductor film includes In, M and Zn, and
wherein M is Al, Ga, Y, or Sn.

14. The semiconductor device according to claim 11 ,
wherein the second oxide semiconductor film includes In and M, and
wherein M is Al, Ga, Y, or Sn.

15. The semiconductor device according to claim 11 ,
wherein the first oxide semiconductor film has a multilayer structure.

16. The semiconductor device according to claim 11 ,
wherein the first oxide semiconductor film includes a crystal part, and
wherein the crystal part has c-axis alignment.

17. The semiconductor device according to claim 11 ,
wherein the first gate electrode and the second gate electrode are electrically connected to each other.

18. A display device comprising:
the semiconductor device according to claim 11 ; and
a display element.

19. A display module comprising:
the display device according to claim 18 ; and
a touch sensor.

20. An electronic device comprising:
the semiconductor device according to claim 11 ;
at least one of the display device according to claim 18 and the display module according to claim 19 ; and
at least one of an operation key and a battery.

Assignees

• Semiconductor Energy Lab

Inventors

• Koezuka Junichi
• Okazaki Kenichi
• Jintyou Masami
• Kurosaki Daisuke
• Iguchi Takahiro
• Goto Naoto
• Yamazaki Shunpei

Classifications

• H01L29/4966

  Electricity · mapped topic

• H01L29/24

  Electricity · mapped topic

• H01L29/78648

  Electricity · mapped topic

• H01L29/4908

  Electricity · mapped topic

• H01L29/7869 Primary

  Electricity · mapped topic