Active device and method for manufacturing active device

Patent metadata

Field	Value
Publication number	US-10008604-B2
Application number	US-201615542910-A
Country	US
Kind code	B2
Filing date	Aug 4, 2016
Priority date	Sep 2, 2015
Publication date	Jun 26, 2018
Grant date	Jun 26, 2018

Abstract

[Object]
The present invention provides an active device in which the misalignment of a partition relative to electrodes is reduced and a method for manufacturing an active device.
[Solution]
An active device according to the present invention includes a substrate 2 , a first electrode 5 and a second electrode 6 formed adjacent to each other on one main surface of the substrate 2 , an organic semiconductor layer 9 formed on the one main surface of the substrate 2 at least over a region between the first electrode 5 and the second electrode 6 , and a partition 12 formed on the one main surface of the substrate 2 in a region that is located outside the organic semiconductor layer 9 in a planar direction and that is different from regions where the first electrode 5 and the second electrode 6 are formed. The partition 12 is formed of a conductive material.

First claim

The invention claimed is:

1. An active device comprising:
a substrate;
first and second electrodes formed adjacent to each other on one main surface of the substrate;
an organic semiconductor layer formed on the one main surface of the substrate at least over a region between the first and second electrodes; and
a partition formed on the one main surface of the substrate in a region that is located outside the organic semiconductor layer in a planar direction and that is different from regions where the first and second electrodes are formed,
wherein the partition comprises a conductive material.

2. The active device according to claim 1 , wherein
the partition comprises a plurality of partitions, and
the organic semiconductor layer is formed between one partition and another partition.

3. The active device according to claim 2 , wherein
one side of the first electrode is located opposite one side of the second electrode,
the one partition is located opposite the other partition, and
a direction in which the one side of the first electrode is located opposite the one side of the second electrode is perpendicular to a direction in which the one partition is located opposite the other partition.

4. The active device according to claim 1 , wherein the conductive material for the partition is Cu.

5. The active device according to claim 1 , further comprising:
an insulating layer formed on the organic semiconductor layer; and
a third electrode formed on the insulating layer,
wherein the partition has a lower wettability than the substrate.

6. The active device according to claim 1 , further comprising:
a third electrode formed on the one main surface of the substrate; and
an insulating layer formed on the third electrode,
wherein the first and second electrodes and the organic semiconductor layer are formed on the insulating layer, and the partition has a lower wettability than the insulating layer.

7. The active device according to claim 1 , further comprising a third electrode formed on another main surface of the substrate,
wherein the partition has a lower wettability than the substrate.

8. The active device according to claim 1 , wherein the partition has a lower wettability than the first and second electrodes.

9. The active device according to claim 1 , wherein
the first electrode comprises a lower first electrode formed on the one main surface of the substrate and an upper first electrode formed on the lower first electrode,
the second electrode comprises a lower second electrode formed on the one main surface of the substrate and an upper second electrode formed on the lower second electrode,
the upper first electrode has a lower wettability than the lower first electrode, and
the upper second electrode has a lower wettability than the lower second electrode.

10. The active device according to claim 1 , wherein the partition is formed to be higher in a thickness direction of the substrate than at least a portion of the first and second electrodes.

11. A method for manufacturing an active device, comprising the steps of:
forming a first conductive layer on one main surface of a substrate;
forming a second conductive layer on the first conductive layer;
forming a mask layer on the second conductive layer;
contacting the first and second conductive layers with an etchant to remove a region of the first and second conductive layers that is not covered by the mask layer, thereby forming first and second electrodes adjacent to each other on the one main surface of the substrate and forming a partition on the one main surface of the substrate in a region that is different from regions where the first and second electrodes are formed and that is located outside a region between the first and second electrodes; and
forming an organic semiconductor layer on the one main surface of the substrate at least over the region between the first and second electrodes such that the partition is located outside the organic semiconductor layer in a planar direction.

12. The method for manufacturing an active device according to claim 11 , further comprising, before forming the organic semiconductor layer, the steps of:
stripping the mask layer from the first and second electrodes and the partition;
forming another mask layer on at least a portion of the second conductive layer that forms the partition; and
contacting the first and second electrodes with another etchant to remove a region of the second conductive layer that is not covered by the other mask layer, thereby exposing at least a portion of the first and second electrodes.

13. The method for manufacturing an active device according to claim 11 , wherein a material for the first conductive layer is ITO, and a material for the second conductive layer is Cu.

Assignees

• Nissha Printing

Inventors

• Nada Hideaki

Classifications

• H01L29/786 Primary

  Electricity · mapped topic

• H01L51/0004

  Electricity · mapped topic

• H01L51/102

  Electricity · mapped topic

• H10D30/67

  Thin-film transistors [TFT] {(Stacked nanowire, nanosheet or nanoribbon FETs H10D30/501)} · CPC title

• H10K71/135 Primary

  using ink-jet printing · CPC title