Method for simultaneous structuring and chip singulation

Patent metadata

Field	Value
Publication number	US-10005659-B2
Application number	US-201715440962-A
Country	US
Kind code	B2
Filing date	Feb 23, 2017
Priority date	Jan 31, 2014
Publication date	Jun 26, 2018
Grant date	Jun 26, 2018

Abstract

A hole plate and a MEMS microphone arrangement are disclosed. In an embodiment a hole plate includes a substrate with a first main surface, a second main surface, and a lateral surface and a perforation structure formed within the substrate, the perforation structure having a plurality of through-holes through the substrate, wherein the through-holes and the lateral surface are a result of a simultaneous dry etching step.

First claim

What is claimed is:

1. A MEMS microphone arrangement comprising:
a MEMS microphone having a membrane that is suspended across a chip cavity formed within a semiconductor chip of the MEMS microphone;
a hole plate comprising a substrate, the hole plate being attached to the semiconductor chip across the chip cavity, wherein the hole plate comprises a plurality of through-holes and a lateral surface, the through-holes and the lateral surface being a result of a simultaneous dry etching step during manufacturing of the hole plate, and wherein the through-holes are not located within a central portion of the chip cavity; and
a base structure comprising a sound port that is smaller than the chip cavity and aligned with the chip cavity and a recess at a surface facing the hole plate, wherein the recess connects the sound port with the through-holes to provide a passage for sound waves from the sound port to the through-holes, and
wherein the hole plate is arranged between the base structure and the semiconductor chip.

2. A MEMS microphone arrangement comprising:
a MEMS microphone having a membrane that is suspended across a chip cavity formed within a semiconductor chip of the MEMS microphone;
a hole plate comprising a substrate, the hole plate being attached to the semiconductor chip across the chip cavity, wherein the hole plate comprises a plurality of through-holes and a lateral surface, and wherein the through-holes are not located within a central portion of the chip cavity; and
a base structure comprising a sound port that is smaller than the chip cavity and aligned with the chip cavity and a recess at a surface facing the hole plate, wherein the recess connects the sound port with the through-holes to provide a passage for sound waves from the sound port to the through-holes, and
wherein the hole plate is arranged between the base structure and the semiconductor chip.

3. The MEMS microphone arrangement according to claim 2 , wherein the base structure is a printed circuit board.

4. The MEMS microphone arrangement according to claim 2 , wherein the hole plate is a semiconductor substrate.

5. The MEMS microphone arrangement according to claim 4 , wherein the semiconductor substrate is silicon.

6. The MEMS microphone arrangement according to claim 2 , wherein the hole plate is a glass substrate.

7. The MEMS microphone arrangement according to claim 2 , wherein the hole plate has a thickness of 30 μm to 300 μm, while the MEMS microphone has a thickness of 200 μm to 1000 μm.

8. The MEMS microphone arrangement according to claim 2 , wherein lateral dimensions of the hole plate are larger than lateral dimensions of the chip cavity.

9. The MEMS microphone arrangement according to claim 2 , wherein the through holes are further separated by four arms.

10. The MEMS microphone arrangement according to claim 2 , wherein the through-holes are at least four through-holes.

11. The MEMS microphone arrangement according to claim 2 , wherein a distance between two neighboring through-holes is larger than diameters of the two neighboring through-holes.

12. A MEMS microphone arrangement comprising:
a MEMS microphone having a membrane that is suspended across a chip cavity formed within a semiconductor chip of the MEMS microphone;
a hole plate comprising a substrate, the hole plate being attached to the semiconductor chip across the chip cavity, wherein the hole plate comprises a plurality of through-holes and a lateral surface; and
a base structure comprising a sound port that is smaller than the chip cavity and aligned with the chip cavity and a recess at a surface facing the hole plate, wherein the recess connects the sound port with the through-holes to provide a passage for sound waves from the sound port to the through-holes, and
wherein the hole plate is arranged between the base structure and the semiconductor chip.

13. The MEMS microphone arrangement according to claim 12 , wherein the base structure is a printed circuit board.

14. The MEMS microphone arrangement according to claim 12 , wherein the hole plate is a semiconductor substrate.

15. The MEMS microphone arrangement according to claim 14 , wherein the semiconductor substrate is silicon.

16. The MEMS microphone arrangement according to claim 12 , wherein the hole plate is a glass substrate.

17. The MEMS microphone arrangement according to claim 12 , wherein the hole plate has a thickness of 30 μm to 300 μm, while the MEMS microphone has a thickness of 200 μm to 1000 μm.

18. The MEMS microphone arrangement according to claim 2 , wherein the hole plate comprises a circumferential portion surrounding the central portion, the through-holes being located in the circumferential portion.

19. The MEMS microphone arrangement according to claim 18 , wherein the central portion is circular and the circumferential portion is ring-shaped.

20. The MEMS microphone arrangement according to claim 18 , wherein the central portion has a rectangular shape with rounded corners.

Assignees

• Infineon Technologies Ag

Inventors

• Grille Thomas
• Hedenig Ursula
• Roesner Michael
• Stranzl Gudrun
• Zgaga Martin

Classifications

• B81B7/0061 Primary

  suitable for fluid transfer from the MEMS out of the package or vice versa, e.g. transfer of liquid, gas, sound · CPC title

• B81B2201/0257

  Microphones or microspeakers · CPC title

• B01D67/0034

  by micromachining techniques, e.g. using masking and etching steps, photolithography · CPC title

• B81C1/00904 Primary

  Multistep processes for the separation of wafers into individual elements not provided for in groups B81C1/00873 - B81C1/00896 · CPC title

• B81C2201/0132

  Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling · CPC title