Method for producing semiconductor device and semiconductor device
US-9299701-B2 · Mar 29, 2016 · US
Method for producing semiconductor device and semiconductor device
US9768294B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9768294-B2 |
| Application number | US-201514753774-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 29, 2015 |
| Priority date | Apr 16, 2013 |
| Publication date | Sep 19, 2017 |
| Grant date | Sep 19, 2017 |
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- Title
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- Abstract
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Abstract
Official abstract text for this publication.
A semiconductor device includes a fin-shaped semiconductor layer, a first insulating film formed around the fin-shaped semiconductor layer, a first metal film formed around the first insulating film, a pillar-shaped semiconductor layer formed on the fin-shaped semiconductor layer, a gate insulating film formed around the pillar-shaped semiconductor layer, a gate electrode formed around the gate insulating film and made of a third metal, a gate line connected to the gate electrode, a second insulating film formed around a sidewall of an upper portion of the pillar-shaped semiconductor layer, and a second metal film formed around the second insulating film. The upper portion of the pillar-shaped semiconductor layer and the second metal film are connected to each other, and an upper portion of the fin-shaped semiconductor layer and the first metal film are connected to each other.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor device comprising: a fin-shaped semiconductor layer on a substrate; a first insulating film around the fin-shaped semiconductor layer; a first metal film around the first insulating film; a pillar-shaped semiconductor layer on the fin-shaped semiconductor layer; a gate insulating film around the pillar-shaped semiconductor layer; a gate electrode around the gate insulating film and made of a third metal; a gate line connected to the gate electrode; a second insulating film around a sidewall of an upper portion of the pillar-shaped semiconductor layer; and a second metal film around the second insulating film, wherein the upper portion of the pillar-shaped semiconductor layer and the second metal film are electrically connected to each other, and an upper portion of the fin-shaped semiconductor layer and the first metal film are electrically connected to each other. 2. The semiconductor device according to claim 1 , wherein the fin-shaped and pillar-shaped semiconductor layers are made of silicon. 3. The semiconductor device according to claim 2 , wherein the first metal film and the second metal film have a work function of 4.0 eV to 4.2 eV. 4. The semiconductor device according to claim 2 , wherein the first metal film and the second metal film have a work function of 5.0 eV to 5.2 eV. 5. The semiconductor device according to claim 1 , wherein the pillar-shaped semiconductor layer has a width equal to a length of a short side of the fin-shaped semiconductor layer.
Assignees
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Classifications
Chemical etching · CPC title
by chemical means · CPC title
by chemical means · CPC title
Structure · CPC title
being Group IVA materials · CPC title
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Frequently asked questions
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- What does patent US9768294B2 cover?
- A semiconductor device includes a fin-shaped semiconductor layer, a first insulating film formed around the fin-shaped semiconductor layer, a first metal film formed around the first insulating film, a pillar-shaped semiconductor layer formed on the fin-shaped semiconductor layer, a gate insulating film formed around the pillar-shaped semiconductor layer, a gate electrode formed around the gate…
- Who is the assignee on this patent?
- Unisantis Elect Singapore Pte
- What technology area does this patent fall under?
- Primary CPC classification H01L29/7827. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Sep 19 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).