Nano-electromechanical system (NEMS) device structure and method for forming the same

Patent metadata

Field	Value
Publication number	US-10000373-B2
Application number	US-201615007852-A
Country	US
Kind code	B2
Filing date	Jan 27, 2016
Priority date	Jan 27, 2016
Publication date	Jun 19, 2018
Grant date	Jun 19, 2018

Abstract

A NEMS device structure and a method for forming the same are provided. The NEMS device structure includes a substrate and an interconnect structure formed over the substrate. The NEMS device structure includes a dielectric layer formed over the interconnect structure and a beam structure formed in and over the dielectric layer. The beam structure includes a fixed portion and a moveable portion, the fixed portion is extended vertically, and the movable portion is extended horizontally. The NEMS device structure includes a cap structure formed over the dielectric layer and the beam structure and a cavity formed between the beam structure and the cap structure.

First claim

What is claimed is:

1. A nano-electromechanical system (NEMS) device structure, comprising:
an interconnect structure formed over a substrate, wherein the interconnect structure comprises a first conductive layer formed in a first dielectric layer, the first conductive layer comprises a first portion, a second portion, and a third portion between the first portion and the second portion;
a second dielectric layer formed over the interconnect structure;
a first supporting electrode formed in and extended above the second dielectric layer, wherein the first supporting electrode is electrically connected to the first portion of the first conductive layer;
a second supporting electrode formed in and extended above the second dielectric layer, wherein the second supporting electrode is electrically connected to the second portion of the first conductive layer; and
a plurality of strip-shaped beam structures formed over the first supporting electrode and the second supporting electrode, wherein each of the plurality of strip-shaped beam structures extends from the first supporting electrode to the second supporting electrode, a first cavity is constructed by the first supporting electrode, the beam structure and the second supporting electrode.

2. The NEMS device structure as claimed in claim 1 , further comprising:
a sensing electrode formed over the third portion of the first conductive layer, wherein the sensing electrode is electrically connected to the third portion of the first conductive layer, and the sensing electrode is not physically in contact with the first supporting electrode.

3. The NEMS device structure as claimed in claim 1 , wherein each of the plurality of strip-shaped beam structures comprises a first end and a second end, the first end is electrically connected to the first supporting electrode, and the second end is electrically connected to the second supporting electrode.

4. The NEMS device structure as claimed in claim 1 , further comprising:
a thin film layer covering the plurality of strip-shaped beam structures, the first supporting electrode and the second supporting electrode.

5. The NEMS device structure as claimed in claim 4 , wherein the thin film layer is made of cobalt (Co), tungsten (W), or titanium oxide (TiO 2 ) or titanium nitride (TiN) a combination thereof.

6. The NEMS device structure as claimed in claim 1 , further comprising:
a transistor formed below the interconnect structure.

7. The NEMS device structure as claimed in claim 1 , further comprising:
a cap structure formed over the plurality of strip-shaped beam structures, wherein a second cavity is formed between the cap structure and the plurality of strip-shaped beam structures.

8. The NEMS device structure as claimed in claim 7 , wherein the cap structure comprises a plurality of release holes.

9. The NEMS device structure as claimed in claim 8 , further comprising:
a first passivation layer formed in the release holes; and
a plurality of air gaps formed in the first passivation layer.

10. A nano-electromechanical system (NEMS) device structure, comprising:
a transistor formed on a substrate;
a first conductive layer formed over the transistor, wherein the first conductive layer comprises a first portion and a second portion;
a dielectric layer formed over the first conductive layer;
a first supporting electrode formed in and extended above the dielectric layer, wherein the first supporting electrode is electrically connected to the first portion of the first conductive layer;
a second supporting electrode formed in and extended above the dielectric layer, wherein the second supporting electrode is electrically connected to the second portion of the first conductive layer;
a beam structure formed over the first supporting electrode and the second supporting electrode, wherein the beam structure comprises a plurality of strip structures, each of the plurality of strip structures extends from the first supporting electrode to the second supporting electrode, a first cavity is constructed by the first supporting electrode, the beam structure and the second supporting electrode; and
a thin film formed on the first supporting electrode, the second supporting electrode and the beam electrode.

11. The NEMS device structure as claimed in claim 10 , wherein the thin film is made of cobalt (Co), tungsten (W), or titanium oxide (TiO 2 ) or titanium nitride (TiN) a combination thereof.

12. The NEMS device structure as claimed in claim 10 , further comprising:
a cap structure formed over the beam structure, wherein the cap structure comprises a plurality of release holes, and a second cavity is formed between the cap structure and the beam structure, and the second cavity surrounds the first cavity.

13. The NEMS device structure as claimed in claim 12 , further comprising:
a first passivation layer formed in a portion of the release holes; and
a second passivation layer formed on the first passivation layer.

14. The NEMS device structure as claimed in claim 10 , wherein the first conductive layer further comprises a third portion between the first portion and the second portion, and the third portion is below the first cavity.

15. The NEMS device structure as claimed in claim 14 , further comprising:
a sensing electrode formed on the third portion of the first conductive layer, wherein the sensing electrode is electrically connected to the third portion of the first conductive layer, and the sensing electrode is not physically in contact with the first supporting electrode.

16. The NEMS device structure as claimed in claim 15 , wherein the thin film covers a top surface of the sensing electrode.

17. A nano-electromechanical system (NEMS) device structure, comprising:
a transistor formed on a substrate;
a dielectric layer formed over the transistor;
a first supporting electrode formed in and extended above the dielectric layer;
a second supporting electrode formed in and extended above the dielectric layer;
a plurality of strip-shaped beam structures connecting the first supporting electrode and the second supporting electrode, wherein each of the plurality of strip-shaped beam structures extends from the first supporting electrode to the second supporting electrode, a first cavity is constructed by the first supporting electrode, the beam structure and the second supporting electrode; and
a cap structure formed over the beam structure, wherein a second cavity is formed between the cap structure and the beam structure and the second cavity surrounds the first cavity.

18. The NEMS device structure as claimed in claim 17 , further comprising:
a thin film formed on the first supporting electrode, the second supporting electrode and the beam electrode.

19. The NEMS device structure as claimed in claim 17 , wherein the cap structure comprises a plurality of release holes, a first passivation layer formed in the release holes, and an air gap is formed in the first passivation layer.

20. The NEMS device structure as claimed in claim 10 , further comprising:
a first passivation layer formed in the release holes, and an air gap is in the first passivation layer.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Chen Hsin-Ping
• Diaz Carlos H
• Goto Ken-Ichi
• Shue Shau-Lin
• Yang Tai-I

Classifications

• H10W20/20 Primary

  Interconnections within wafers or substrates, e.g. through-silicon vias [TSV] · CPC title

• B81B2207/09

  Packages · CPC title

• B81C1/00246 Primary

  Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate · CPC title

• B81B2207/015

  the micromechanical device and the control or processing electronics being integrated on the same substrate · CPC title

• B81C2203/0136

  Growing or depositing of a covering layer · CPC title