Buried channel deeply depleted channel transistor
US-9991300-B2 · Jun 5, 2018 · US
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Wang Lingquan patents
Wang Lingquan is listed as an inventor on 12 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Wang Lingquan |
| Total patents | 12 |
| First publication | May 5, 2015 |
| Latest publication | Jun 5, 2018 |
Notable patents
Publications ranked by popularity score, then publication date.
Buried Channel Deeply Depleted Channel Transistor
US-2017323916-A1 · Nov 9, 2017 · US
Buried channel deeply depleted channel transistor
US-9786703-B2 · Oct 10, 2017 · US
Buried Channel Deeply Depleted Channel Transistor
US-2017025457-A1 · Jan 26, 2017 · US
Buried channel deeply depleted channel transistor
US-9478571-B1 · Oct 25, 2016 · US
Method for fabricating a transistor with reduced junction leakage current
US-9368624-B2 · Jun 14, 2016 · US
High uniformity screen and epitaxial layers for CMOS devices
US-9196727-B2 · Nov 24, 2015 · US
High Uniformity Screen and Epitaxial Layers for CMOS Devices
US-2015333144-A1 · Nov 19, 2015 · US
Semiconductor devices with dopant migration suppression and method of fabrication thereof
US-9112057-B1 · Aug 18, 2015 · US
Semiconductor structure with reduced junction leakage and method of fabrication thereof
US-9105711-B2 · Aug 11, 2015 · US
Recent patents
Latest publications not already listed above.
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Mie Fujitsu Semiconductor Ltd | 11 |
| Suvolta Inc | 1 |
| Univ California | 1 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10D62/371 | 10 |
| H10D30/601 | 9 |
| H10D62/314 | 9 |
| H01L29/7833 | 6 |
| H01L29/1083 | 6 |