Method of manufacturing a semiconductor device including an ohmic contact and a gate dielectric
US-2025357122-A1 · Nov 20, 2025 · US
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Rescher Gerald patents
Rescher Gerald is listed as an inventor on 9 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Rescher Gerald |
| Total patents | 9 |
| First publication | Oct 10, 2019 |
| Latest publication | Nov 20, 2025 |
Notable patents
Publications ranked by popularity score, then publication date.
Method of forming a sic/gate dielectric interface layer in a semiconductor device
US-2025323039-A1 · Oct 16, 2025 · US
Methods for forming Wide Band Gap Semiconductor Devices Using Different Reactive Gas Species
US-2025279278-A1 · Sep 4, 2025 · US
Method for annealing a gate insulation layer on a wide band gap semiconductor substrate
US-12341012-B2 · Jun 24, 2025 · US
Transistor Device
US-2025107202-A1 · Mar 27, 2025 · US
Silicon carbide device
US-2025006814-A1 · Jan 2, 2025 · US
Method for Annealing a Gate Insulation Layer on a Wide Band Gap Semiconductor Substrate
US-2022157607-A1 · May 19, 2022 · US
Wide band gap semiconductor device and method for forming a wide band gap semiconductor device
US-11295951-B2 · Apr 5, 2022 · US
Wide Band Gap Semiconductor Device and Method for Forming a Wide Band Gap Semiconductor Device
US-2019311903-A1 · Oct 10, 2019 · US
Recent patents
Latest publications not already listed above.
No data yet.
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Infineon Technologies Ag | 9 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10D62/8325 | 9 |
| H10D64/01366 | 8 |
| H10D64/01 | 8 |
| H10P14/6334 | 6 |
| H01L21/049 | 6 |