Method for manufacturing ammonia synthesis catalyst, and method for manufacturing ammonia
US-12458953-B2 · Nov 4, 2025 · US
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Li Jiang patents
Li Jiang is listed as an inventor on 15 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Li Jiang |
| Total patents | 15 |
| First publication | Jan 27, 2015 |
| Latest publication | Nov 4, 2025 |
Notable patents
Publications ranked by popularity score, then publication date.
Method for manufacturing ammonia synthesis catalyst, and method for manufacturing ammonia
US-2024226854-A1 · Jul 11, 2024 · US
Method for manufacturing ammonia synthesis catalyst, and method for manufacturing ammonia
US-11964260-B2 · Apr 23, 2024 · US
Busbar and method of manufacturing busbar
US-2023096039-A1 · Mar 30, 2023 · US
Method for manufacturing ammonia synthesis catalyst, and method for manufacturing ammonia
US-11235310-B2 · Feb 1, 2022 · US
Method for manufacturing ammonia synthesis catalyst, and method for manufacturing ammonia
US-2021016254-A1 · Jan 21, 2021 · US
Transition-metal-supporting intermetallic compound, supported metallic catalyst, and ammonia producing method
US-10792645-B2 · Oct 6, 2020 · US
Method for manufacturing ammonia synthesis catalyst, and method for manufacturing ammonia
US-2019210008-A1 · Jul 11, 2019 · US
Transition-metal-supported intermetallic compound, supported metallic catalyst, and ammonia producing method
US-2018304237-A1 · Oct 25, 2018 · US
Nitride semiconductor device, production method thereof, diode, and field effect transistor
US-9911842-B2 · Mar 6, 2018 · US
Recent patents
Latest publications not already listed above.
Nitride semiconductor device, production method thereof, diode, and field effect transistor
US-2016225889-A1 · Aug 4, 2016 · US
Semiconductor multi-layer substrate and semiconductor element
US-9276066-B2 · Mar 1, 2016 · US
Semiconductor multi-layer substrate and semiconductor element
US-2015221725-A1 · Aug 6, 2015 · US
Field effect transistor having semiconductor operating layer formed with an inclined side wall
US-9048302-B2 · Jun 2, 2015 · US
Semiconductor device
US-8941149-B2 · Jan 27, 2015 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Tokyo Inst Tech | 8 |
| Tsubame Bhb Co Ltd | 6 |
| Furukawa Electric Co Ltd | 5 |
| Japan Science & Tech Agency | 2 |
| Fuji Electric Co Ltd | 2 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| C01C1/0411 | 8 |
| B01J23/462 | 8 |
| B01J35/612 | 8 |
| Y02P20/52 | 8 |
| C01C1/04 | 8 |