Semiconductor structure and fabrication method therefor
US-2026068122-A1 · Mar 5, 2026 · US
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Li Huihui patents
Li Huihui is listed as an inventor on 103 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Li Huihui |
| Total patents | 103 |
| First publication | Aug 20, 2015 |
| Latest publication | Mar 5, 2026 |
Notable patents
Publications ranked by popularity score, then publication date.
Ferroelectric memory, three-dimensional ferroelectric memory, and three-dimensional ferroelectric memory device
US-2026059764-A1 · Feb 26, 2026 · US
Semiconductor structure and manufacturing method thereof
US-12550336-B2 · Feb 10, 2026 · US
Three-dimensional memory array and manufacturing method therefor, and electronic apparatus
US-2025393216-A1 · Dec 25, 2025 · US
Method for fabricating semiconductor structure, and semiconductor structure
US-12451362-B2 · Oct 21, 2025 · US
Semiconductor structure and manufacturing method thereof
US-12432932-B2 · Sep 30, 2025 · US
Display apparatus, method of displaying image, and computer-program product
US-12424167-B2 · Sep 23, 2025 · US
Semiconductor structure, manufacturing method therefor and memory
US-12419058-B2 · Sep 16, 2025 · US
Geometric semiconductor memory structure and manufacturing method thereof
US-12400957-B2 · Aug 26, 2025 · US
Method for fabricating semiconductor structure and semiconductor structure
US-12396369-B2 · Aug 19, 2025 · US
Recent patents
Latest publications not already listed above.
Display device and display panel
US-2025246120-A1 · Jul 31, 2025 · US
Display apparatus, method of displaying image, and computer-program product
US-2025232720-A1 · Jul 17, 2025 · US
Memory device and preparing method thereof
US-12356632-B2 · Jul 8, 2025 · US
Semiconductor structure and method for manufacturing same, and semiconductor memory
US-12349601-B2 · Jul 1, 2025 · US
Compensation method and apparatus for display device, and storage medium
US-12347370-B2 · Jul 1, 2025 · US
Method of manufacturing magnetic random access memory and magnetic random access memory
US-12342729-B2 · Jun 24, 2025 · US
Method for manufacturing semiconductor structure, semiconductor structure, and semiconductor memory
US-12310247-B2 · May 20, 2025 · US
Semiconductor structure and manufacturing method thereof
US-12310030-B2 · May 20, 2025 · US
Method and apparatus for compensating for display defect, medium, electronic device, and display apparatus
US-2025157371-A1 · May 15, 2025 · US
Display module and display device
US-12288516-B2 · Apr 29, 2025 · US
Display method, display device, and computer readable medium
US-12288514-B2 · Apr 29, 2025 · US
Semiconductor structure and manufacturing method thereof
US-12279440-B2 · Apr 15, 2025 · US
Display method, display device, and computer readable medium
US-2025095563-A1 · Mar 20, 2025 · US
Semiconductor structure, method of reading data from semiconductor structure, and method of writing data into semiconductor structure
US-12254912-B2 · Mar 18, 2025 · US
Method for manufacturing semiconductor structure, semiconductor structure and semiconductor memory
US-12232330-B2 · Feb 18, 2025 · US
Display method, structure and apparatus with data voltage compensation based on driving transistor threshold voltage
US-12211426-B2 · Jan 28, 2025 · US
Vertical transistor, storage unit and manufacturing method therefor
US-2025031411-A1 · Jan 23, 2025 · US
Compensation method and apparatus for display device, and storage medium
US-2025006121-A1 · Jan 2, 2025 · US
Chip on film and display device
US-12164201-B2 · Dec 10, 2024 · US
Display module and display device
US-2024321195-A1 · Sep 26, 2024 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Boe Technology Group Co Ltd | 47 |
| Changxin Memory Tech Inc | 38 |
| Beijing Superstring Academy Of Memory Tech | 30 |
| Hefei Xinsheng Optoelectronics Technology Co Ltd | 25 |
| Hefei Boe Joint Tech Co Ltd | 16 |
Top CPC classifications
Most common classification codes across this inventor's patents.