Semiconductor device power metallization layer with stress-relieving heat sink structure
US-11276624-B2 · Mar 15, 2022 · US
Heitzsch Olaf is listed as an inventor on 2 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Heitzsch Olaf |
| Total patents | 2 |
| First publication | Jun 17, 2021 |
| Latest publication | Mar 15, 2022 |
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Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Infineon Technologies Austria Ag | 2 |
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10W40/22 | 2 |
| H10W20/089 | 2 |
| H10W20/056 | 2 |
| H10W20/035 | 2 |
| H10W40/735 | 2 |