3D Compatible 2 Transistor-n Capacitor Ferroelectric Random Access Memory with Quasi-Nondestructive Readout Characteristics
US-2025372141-A1 · Dec 4, 2025 · US
Deng Shan is listed as an inventor on 7 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Deng Shan |
| Total patents | 7 |
| First publication | Feb 14, 2019 |
| Latest publication | Dec 4, 2025 |
Publications ranked by popularity score, then publication date.
US-2025372141-A1 · Dec 4, 2025 · US
US-11381472-B2 · Jul 5, 2022 · US
US-11237217-B2 · Feb 1, 2022 · US
US-11054479-B2 · Jul 6, 2021 · US
US-2020233034-A1 · Jul 23, 2020 · US
US-2019049520-A1 · Feb 14, 2019 · US
US-2019052543-A1 · Feb 14, 2019 · US
Latest publications not already listed above.
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Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Faraday&Future Inc | 5 |
| Penn State Res Found | 1 |
| Faraday & Future Inc | 1 |
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H01M10/48 | 4 |
| G01R31/385 | 4 |
| G01R1/025 | 4 |
| G01R31/3865 | 4 |
| B60L55/00 | 4 |