3D Compatible 2 Transistor-n Capacitor Ferroelectric Random Access Memory with Quasi-Nondestructive Readout Characteristics
US-2025372141-A1 · Dec 4, 2025 · US
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Patent family 97872233
This patent family groups 1 related publication across US. Members often share priority claims or equivalent filings in different countries.
| Field | Value |
|---|---|
| Family ID | 97872233 |
| Family type | — |
| Earliest priority | May 31, 2024 |
| First filing country | US |
| Member publications | 1 |
| Countries | US |
| Representative publication | US2025372141A1 — 3D Compatible 2 Transistor-n Capacitor Ferroelectric Random Access Memory with Quasi-Nondestructive Readout Characteristics |
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US2025372141A1 — 3D Compatible 2 Transistor-n Capacitor Ferroelectric Random Access Memory with Quasi-Nondestructive Readout Characteristics (published Dec 4, 2025)
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