Tin based perovskite field effect transistor memory and method of manufacturing same
US-2025386747-A1 · Dec 18, 2025 · US
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Patent family 94733804
This patent family groups 1 related publication across US. Members often share priority claims or equivalent filings in different countries.
| Field | Value |
|---|---|
| Family ID | 94733804 |
| Family type | — |
| Earliest priority | Jun 13, 2024 |
| First filing country | US |
| Member publications | 1 |
| Countries | US |
| Representative publication | US2025386747A1 — Tin based perovskite field effect transistor memory and method of manufacturing same |
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US2025386747A1 — Tin based perovskite field effect transistor memory and method of manufacturing same (published Dec 18, 2025)
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