High-frequency drain-extended metal-oxide-semiconductor (demos) devices and methods for producing the same
US-2025056829-A1 · Feb 13, 2025 · US
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Patent family 89895002
This patent family groups 1 related publication across US. Members often share priority claims or equivalent filings in different countries.
| Field | Value |
|---|---|
| Family ID | 89895002 |
| Family type | — |
| Earliest priority | Nov 21, 2023 |
| First filing country | US |
| Member publications | 1 |
| Countries | US |
| Representative publication | US2025056829A1 — High-frequency drain-extended metal-oxide-semiconductor (demos) devices and methods for producing the same |
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US2025056829A1 — High-frequency drain-extended metal-oxide-semiconductor (demos) devices and methods for producing the same (published Feb 13, 2025)
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