Single stack dual channel gate-all-around nanosheet with strained PFET and bottom dielectric isolation NFET
US-12568683-B2 · Mar 3, 2026 · US
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Patent family 89323504
This patent family groups 2 related publications across US. Members often share priority claims or equivalent filings in different countries.
| Field | Value |
|---|---|
| Family ID | 89323504 |
| Family type | — |
| Earliest priority | Jun 23, 2022 |
| First filing country | US |
| Member publications | 2 |
| Countries | US |
| Representative publication | US12568683B2 — Single stack dual channel gate-all-around nanosheet with strained PFET and bottom dielectric isolation NFET |
Representative publication
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US12568683B2 — Single stack dual channel gate-all-around nanosheet with strained PFET and bottom dielectric isolation NFET (published Mar 3, 2026)
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