Low defect, high mobility thin film transistors with in-situ doped metal oxide channel material
US-12471318-B2 · Nov 11, 2025 · US
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Patent family 80933427
This patent family groups 2 related publications across US. Members often share priority claims or equivalent filings in different countries.
| Field | Value |
|---|---|
| Family ID | 80933427 |
| Family type | — |
| Earliest priority | May 5, 2021 |
| First filing country | US |
| Member publications | 2 |
| Countries | US |
| Representative publication | US12471318B2 — Low defect, high mobility thin film transistors with in-situ doped metal oxide channel material |
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US12471318B2 — Low defect, high mobility thin film transistors with in-situ doped metal oxide channel material (published Nov 11, 2025)
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