Thin film resistor (TFR) formed in an integrated circuit device using an oxide cap layer as a TFR etch hardmask
US-11495657-B2 · Nov 8, 2022 · US
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Patent family 77463151
This patent family groups 2 related publications across US. Members often share priority claims or equivalent filings in different countries.
| Field | Value |
|---|---|
| Family ID | 77463151 |
| Family type | — |
| Earliest priority | Mar 2, 2020 |
| First filing country | US |
| Member publications | 2 |
| Countries | US |
| Representative publication | US11495657B2 — Thin film resistor (TFR) formed in an integrated circuit device using an oxide cap layer as a TFR etch hardmask |
Representative publication
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US11495657B2 — Thin film resistor (TFR) formed in an integrated circuit device using an oxide cap layer as a TFR etch hardmask (published Nov 8, 2022)
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