Method for forming an ohmic contact on a wide-bandgap semiconductor device and wide-bandgap semiconductor device
US-2024222462-A1 · Jul 4, 2024 · US
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Patent family 75426358
This patent family groups 1 related publication across US. Members often share priority claims or equivalent filings in different countries.
| Field | Value |
|---|---|
| Family ID | 75426358 |
| Family type | — |
| Earliest priority | Apr 6, 2021 |
| First filing country | US |
| Member publications | 1 |
| Countries | US |
| Representative publication | US2024222462A1 — Method for forming an ohmic contact on a wide-bandgap semiconductor device and wide-bandgap semiconductor device |
Representative publication
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US2024222462A1 — Method for forming an ohmic contact on a wide-bandgap semiconductor device and wide-bandgap semiconductor device (published Jul 4, 2024)
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