Semiconductor structure including first FinFET devices for low power applications and second FinFET devices for high power applications
US-11011517-B2 · May 18, 2021 · US
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Patent family 71123156
This patent family groups 2 related publications across US. Members often share priority claims or equivalent filings in different countries.
| Field | Value |
|---|---|
| Family ID | 71123156 |
| Family type | — |
| Earliest priority | Jan 2, 2019 |
| First filing country | US |
| Member publications | 2 |
| Countries | US |
| Representative publication | US11011517B2 — Semiconductor structure including first FinFET devices for low power applications and second FinFET devices for high power applications |
Representative publication
Best representative member for this family based on priority and filing country.
US11011517B2 — Semiconductor structure including first FinFET devices for low power applications and second FinFET devices for high power applications (published May 18, 2021)
Member publications
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US-2020212037-A1 · Jul 2, 2020 · US