Three-dimensional memory device with self-aligned drain side select gate electrodes and method of making thereof
US-10490568-B2 · Nov 26, 2019 · US
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Patent family 59859633
This patent family groups 4 related publications across US. Members often share priority claims or equivalent filings in different countries.
| Field | Value |
|---|---|
| Family ID | 59859633 |
| Family type | — |
| Earliest priority | Nov 17, 2016 |
| First filing country | US |
| Member publications | 4 |
| Countries | US |
| Representative publication | US10490568B2 — Three-dimensional memory device with self-aligned drain side select gate electrodes and method of making thereof |
Representative publication
Best representative member for this family based on priority and filing country.
US10490568B2 — Three-dimensional memory device with self-aligned drain side select gate electrodes and method of making thereof (published Nov 26, 2019)
Member publications
Related publications in this family.
Three-dimensional memory device with self-aligned drain side select gate electrodes and method of making thereof
US-2018211970-A1 · Jul 26, 2018 · US
Three-dimensional memory device with self-aligned drain side select gate electrodes and method of making thereof
US-2018138189-A1 · May 17, 2018 · US
Three-dimensional memory device with self-aligned drain side select gate electrodes and method of making thereof
US-9972640-B1 · May 15, 2018 · US