Co-fabricated gate-all-around field effect transistor and fin field effect transistor
US-10566434-B2 · Feb 18, 2020 · US
This page is not indexed by search engines while we improve data quality.
Patent family 57749713
This patent family groups 2 related publications across US. Members often share priority claims or equivalent filings in different countries.
| Field | Value |
|---|---|
| Family ID | 57749713 |
| Family type | — |
| Earliest priority | Dec 22, 2016 |
| First filing country | US |
| Member publications | 2 |
| Countries | US |
| Representative publication | US10566434B2 — Co-fabricated gate-all-around field effect transistor and fin field effect transistor |
Representative publication
Best representative member for this family based on priority and filing country.
US10566434B2 — Co-fabricated gate-all-around field effect transistor and fin field effect transistor (published Feb 18, 2020)
Member publications
Related publications in this family.
Semiconductor structures and method of forming same
US-2018233570-A1 · Aug 16, 2018 · US