Dual-gate PMOS field effect transistor with InGaAs channel
US-10644100-B2 · May 5, 2020 · US
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Patent family 57717437
This patent family groups 2 related publications across US. Members often share priority claims or equivalent filings in different countries.
| Field | Value |
|---|---|
| Family ID | 57717437 |
| Family type | — |
| Earliest priority | Oct 12, 2016 |
| First filing country | US |
| Member publications | 2 |
| Countries | US |
| Representative publication | US10644100B2 — Dual-gate PMOS field effect transistor with InGaAs channel |
Representative publication
Best representative member for this family based on priority and filing country.
US10644100B2 — Dual-gate PMOS field effect transistor with InGaAs channel (published May 5, 2020)
Member publications
Related publications in this family.
DUAL-GATE PMOS FIELD EFFECT TRANSISTOR WITH InGaAs CHANNEL
US-2019229182-A1 · Jul 25, 2019 · US