Method of forming trench semiconductor device having multiple trench depths
US-9859449-B2 · Jan 2, 2018 · US
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Patent family 56850999
This patent family groups 4 related publications across US. Members often share priority claims or equivalent filings in different countries.
| Field | Value |
|---|---|
| Family ID | 56850999 |
| Family type | — |
| Earliest priority | Mar 6, 2015 |
| First filing country | US |
| Member publications | 4 |
| Countries | US |
| Representative publication | US9859449B2 — Method of forming trench semiconductor device having multiple trench depths |
Representative publication
Best representative member for this family based on priority and filing country.
US9859449B2 — Method of forming trench semiconductor device having multiple trench depths (published Jan 2, 2018)
Member publications
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Method of forming trench semiconductor device having multiple trench depths
US-2017288027-A1 · Oct 5, 2017 · US
Trench semiconductor device having multiple trench depths and method
US-9716187-B2 · Jul 25, 2017 · US
Trench semiconductor device having multiple trench depths and method
US-2016260844-A1 · Sep 8, 2016 · US