Resistance change memory, method of manufacturing resistance change memory, and FET
US-9825096-B2 · Nov 21, 2017 · US
This patent family groups 2 related publications across US. Members often share priority claims or equivalent filings in different countries.
| Field | Value |
|---|---|
| Family ID | 55455549 |
| Family type | — |
| Earliest priority | Sep 17, 2014 |
| First filing country | US |
| Member publications | 2 |
| Countries | US |
| Representative publication | US9825096B2 — Resistance change memory, method of manufacturing resistance change memory, and FET |
Best representative member for this family based on priority and filing country.
US9825096B2 — Resistance change memory, method of manufacturing resistance change memory, and FET (published Nov 21, 2017)
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