Semiconductor device contact structure having stacked nickel, copper, and tin layers
US-9853006-B2 · Dec 26, 2017 · US
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Patent family 55348898
This patent family groups 4 related publications across US. Members often share priority claims or equivalent filings in different countries.
| Field | Value |
|---|---|
| Family ID | 55348898 |
| Family type | — |
| Earliest priority | Aug 25, 2014 |
| First filing country | US |
| Member publications | 4 |
| Countries | US |
| Representative publication | US9853006B2 — Semiconductor device contact structure having stacked nickel, copper, and tin layers |
Representative publication
Best representative member for this family based on priority and filing country.
US9853006B2 — Semiconductor device contact structure having stacked nickel, copper, and tin layers (published Dec 26, 2017)
Member publications
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Layered contact structure
US-2016307860-A1 · Oct 20, 2016 · US
Multilayered contact structure having nickel, copper, and nickel-iron layers
US-9396991-B2 · Jul 19, 2016 · US
Multilayered contact structure having nickel, copper, and nickel-iron layers
US-2016056072-A1 · Feb 25, 2016 · US