Semiconductor devices having source/drain regions with strain-inducing layers and methods of manufacturing such semiconductor devices
US-9755076-B2 · Sep 5, 2017 · US
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Patent family 55167366
This patent family groups 5 related publications across US. Members often share priority claims or equivalent filings in different countries.
| Field | Value |
|---|---|
| Family ID | 55167366 |
| Family type | — |
| Earliest priority | Jul 25, 2014 |
| First filing country | US |
| Member publications | 5 |
| Countries | US |
| Representative publication | US9755076B2 — Semiconductor devices having source/drain regions with strain-inducing layers and methods of manufacturing such semiconductor devices |
Representative publication
Best representative member for this family based on priority and filing country.
US9755076B2 — Semiconductor devices having source/drain regions with strain-inducing layers and methods of manufacturing such semiconductor devices (published Sep 5, 2017)
Member publications
Related publications in this family.
Semiconductor devices having source/drain regions with strain-inducing layers and methods of manufacturing such semiconductor devices
US-2017092766-A1 · Mar 30, 2017 · US
Semiconductor devices having source/drain regions with strain-inducing layers and methods of manufacturing such semiconductor devices
US-9553192-B2 · Jan 24, 2017 · US
Semiconductor devices having source/drain regions with strain-inducing layers and methods of manufacturing such semiconductor devices
US-2016308052-A1 · Oct 20, 2016 · US
Semiconductor devices having source/drain regions with strain-inducing layers and methods of manufacturing such semiconductor devices
US-9397219-B2 · Jul 19, 2016 · US