Fin field effect transistor (FinFET) device and method for forming the same
US-9401415-B2 · Jul 26, 2016 · US
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Patent family 53798839
This patent family groups 2 related publications across US. Members often share priority claims or equivalent filings in different countries.
| Field | Value |
|---|---|
| Family ID | 53798839 |
| Family type | — |
| Earliest priority | Feb 14, 2014 |
| First filing country | US |
| Member publications | 2 |
| Countries | US |
| Representative publication | US9401415B2 — Fin field effect transistor (FinFET) device and method for forming the same |
Representative publication
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US9401415B2 — Fin field effect transistor (FinFET) device and method for forming the same (published Jul 26, 2016)
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