LDMOS with improved breakdown voltage and with non-uniformed gate dielectric and gate electrode
US-10032902-B2 · Jul 24, 2018 · US
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Patent family 46794762
This patent family groups 3 related publications across US. Members often share priority claims or equivalent filings in different countries.
| Field | Value |
|---|---|
| Family ID | 46794762 |
| Family type | — |
| Earliest priority | Mar 11, 2011 |
| First filing country | US |
| Member publications | 3 |
| Countries | US |
| Representative publication | US10032902B2 — LDMOS with improved breakdown voltage and with non-uniformed gate dielectric and gate electrode |
Representative publication
Best representative member for this family based on priority and filing country.
US10032902B2 — LDMOS with improved breakdown voltage and with non-uniformed gate dielectric and gate electrode (published Jul 24, 2018)
Member publications
Related publications in this family.
Ldmos with improved breakdown voltage
US-2015325697-A1 · Nov 12, 2015 · US
LDMOS with two gate stacks having different work functions for improved breakdown voltage
US-9034711-B2 · May 19, 2015 · US