Process for producing a group-III nitride crystal and process for producing a light-emitting semiconductor element or a semiconductor device comprising a group-III nitride crystal
US-9428386-B2 · Aug 30, 2016 · US
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Patent family 44304331
This patent family groups 1 related publication across US. Members often share priority claims or equivalent filings in different countries.
| Field | Value |
|---|---|
| Family ID | 44304331 |
| Family type | — |
| Earliest priority | Jan 15, 2010 |
| First filing country | US |
| Member publications | 1 |
| Countries | US |
| Representative publication | US9428386B2 — Process for producing a group-III nitride crystal and process for producing a light-emitting semiconductor element or a semiconductor device comprising a group-III nitride crystal |
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US9428386B2 — Process for producing a group-III nitride crystal and process for producing a light-emitting semiconductor element or a semiconductor device comprising a group-III nitride crystal (published Aug 30, 2016)
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