Nitride-based transistors with a protective layer and a low-damage recess
US-11316028-B2 · Apr 26, 2022 · US
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Patent family 34807509
This patent family groups 1 related publication across US. Members often share priority claims or equivalent filings in different countries.
| Field | Value |
|---|---|
| Family ID | 34807509 |
| Family type | — |
| Earliest priority | Jan 16, 2004 |
| First filing country | US |
| Member publications | 1 |
| Countries | US |
| Representative publication | US11316028B2 — Nitride-based transistors with a protective layer and a low-damage recess |
Representative publication
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US11316028B2 — Nitride-based transistors with a protective layer and a low-damage recess (published Apr 26, 2022)
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