Integrated circuits with finfet gate structures
US-2024105719-A1 · Mar 28, 2024 · US
the gate conductors having different materials or different implants
the gate conductors having different materials or different implants · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10D84/014 |
| Official title | {the gate conductors having different materials or different implants} |
| Display label | the gate conductors having different materials or different implants |
| Total patents | 1,638 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is stable.
| Year | Patents |
|---|---|
| 2015 | 74 |
| 2016 | 99 |
| 2017 | 129 |
| 2018 | 117 |
| 2019 | 153 |
| 2020 | 194 |
| 2021 | 163 |
| 2022 | 211 |
| 2023 | 154 |
| 2024 | 170 |
| 2025 | 144 |
| 2026 | 30 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Semiconductor device
US-2015380416-A1 · Dec 31, 2015 · US
Fin-shaped field-effect transistor process
US-2015380319-A1 · Dec 31, 2015 · US
Replacement gate structure for enhancing conductivity
US-2015372112-A1 · Dec 24, 2015 · US
Fabricating method of a semiconductor device
US-9218977-B2 · Dec 22, 2015 · US
Multi-threshold voltage devices and associated techniques and configurations
US-9219155-B2 · Dec 22, 2015 · US
Methods of Fabricating Semiconductor Devices and Structures Thereof
US-2015364328-A1 · Dec 17, 2015 · US
Method for manufacturing semiconductor device
US-9214349-B2 · Dec 15, 2015 · US
Semiconductor structures and fabrication method thereof
US-2015348788-A1 · Dec 3, 2015 · US
Advanced transistors with threshold voltage set dopant structures
US-2015340460-A1 · Nov 26, 2015 · US
Method for cmp of high-k metal gate structures
US-2015340451-A1 · Nov 26, 2015 · US
Transistor devices with high-k insulation layers
US-2015340362-A1 · Nov 26, 2015 · US
Preventing Over-Polishing of Poly Gate in Metal-Gate CMP
US-2015340286-A1 · Nov 26, 2015 · US
Method for manufacturing semiconductor devices
US-9196542-B2 · Nov 24, 2015 · US
Methods of forming gate structure of semiconductor devices and the resulting devices
US-9190488-B1 · Nov 17, 2015 · US
Transistors and fabrication methods thereof
US-9190481-B2 · Nov 17, 2015 · US
Semiconductor devices
US-9190410-B2 · Nov 17, 2015 · US
Cost-Effective Gate Replacement Process
US-2015325669-A1 · Nov 12, 2015 · US
Contact bars with reduced fringing capacitance in a semiconductor device
US-9184095-B2 · Nov 10, 2015 · US
Methods of forming gate structures of semiconductor devices
US-9178035-B1 · Nov 3, 2015 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10D84/014?
- CPC H10D84/014 is the Cooperative Patent Classification code for “the gate conductors having different materials or different implants.”
- How many patents are filed under CPC H10D84/014 (the gate conductors having different materials or different implants)?
- Our database includes 1,638 publications tagged with this CPC code.
- Is patent activity under CPC H10D84/014 growing?
- Publication counts under this code: 170 in 2024 vs 144 in 2025 (latest complete years).