Bipolar junction transistor with dielectric isolation structures
US-2025234634-A1 · Jul 17, 2025 · US
Inverted vertical BJTs
Inverted vertical BJTs · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10D10/461 |
| Official title | {Inverted vertical BJTs} |
| Display label | Inverted vertical BJTs |
| Total patents | 50 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is rapidly declining.
| Year | Patents |
|---|---|
| 2015 | 3 |
| 2016 | 5 |
| 2017 | 2 |
| 2018 | 6 |
| 2019 | 17 |
| 2020 | 5 |
| 2021 | 6 |
| 2023 | 4 |
| 2024 | 1 |
| 2025 | 1 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Power semiconductor device comprising a thyristor and a bipolar junction transistor
US-12148818-B2 · Nov 19, 2024 · US
Bipolar junction transistors with duplicated terminals
US-11749727-B2 · Sep 5, 2023 · US
Integrated circuit devices with well regions and methods for forming the same
US-11735485-B2 · Aug 22, 2023 · US
Power Semiconductor Device Comprising a Thyristor and a Bipolar Junction Transistor
US-2023118951-A1 · Apr 20, 2023 · US
Bipolar junction transistors with duplicated terminals
US-2023096328-A1 · Mar 30, 2023 · US
Bipolar junction transistor with vertically integrated resistor
US-11189701-B1 · Nov 30, 2021 · US
Integrated Circuit Devices with Well Regions and Methods for Forming the Same
US-2021305099-A1 · Sep 30, 2021 · US
Semiconductor device
US-2021257358-A1 · Aug 19, 2021 · US
Integrated circuit devices with well regions
US-11043431-B2 · Jun 22, 2021 · US
Doping and fabrication of diamond and C-BN based device structures
US-11011514-B2 · May 18, 2021 · US
Bipolar junction transistor (BJT) for liquid flow biosensing applications without a reference electrode and large sensing area
US-10892346-B2 · Jan 12, 2021 · US
Single column compound semiconductor bipolar junction transistor with all-around base
US-10833181-B2 · Nov 10, 2020 · US
High surge bi-directional transient voltage suppressor
US-10692851-B2 · Jun 23, 2020 · US
Hybrid cascode constructions with multiple transistor types
US-10644654-B2 · May 5, 2020 · US
Single column compound semiconductor bipolar junction transistor with all-around base
US-2020091322-A1 · Mar 19, 2020 · US
Single column compound semiconductor bipolar junction transistor with all-around base
US-10566447-B2 · Feb 18, 2020 · US
Doping and fabrication of diamond and c-bn based device structures
US-2019363078-A1 · Nov 28, 2019 · US
Bipolar junction transistor (bjt) for liquid flow biosensing applications without a reference electrode and large sensing area
US-2019312125-A1 · Oct 10, 2019 · US
Single column compound semiconductor bipolar junction transistor fabricated on III-V compound semiconductor surface
US-10424650-B2 · Sep 24, 2019 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10D10/461?
- CPC H10D10/461 is the Cooperative Patent Classification code for “Inverted vertical BJTs.”
- How many patents are filed under CPC H10D10/461 (Inverted vertical BJTs)?
- Our database includes 50 publications tagged with this CPC code.
- Is patent activity under CPC H10D10/461 growing?
- Publication counts under this code: 1 in 2024 vs 1 in 2025 (latest complete years).